Multi-Mode RF Power Amplifier Biasing for Linearity and Efficiency

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Solution Overview

Problem

Conventional power amplifiers integrated into a single IC core face challenges in optimizing performance indexes like linearity and efficiency across multiple communication modes such as 2G, 4G, and 5G.

Innovation Solution

The power amplifier design includes multiple bias circuits and linearization circuits, each optimized for specific communication modes. These circuits supply bias currents and couple portions of the RF signal to improve linearity and efficiency in different communication modes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a single power amplifier IC core supports multiple communication modes, then device integration and versatility are improved, but performance optimization for each mode deteriorates

Engineering Contradiction:
Improvemulti-mode supportVSAvoidperformance optimization
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The power amplifier is divided into multiple operational paths with separate bias circuits (first bias circuit for 2G mode, second bias circuit for 4G/5G modes) and linearization circuits (first linearization circuit for 2G mode, second linearization circuit for 4G/5G modes). Each segment is independently optimized for its specific communication mode, allowing the single IC core to maintain high performance across multiple modes through selective activation of appropriate segments.

Inventive Principle:
Principle #1Segmentation

2Reliability

If mode-specific bias circuits are implemented, then linearity and efficiency for each mode are improved, but device complexity increases

Engineering Contradiction:
Improvelinearity and efficiencyVSAvoidcircuit configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The power amplifier IC core is designed with multi-functional capability to support multiple communication modes (2G, 4G, 5G) through a unified structure that incorporates mode-specific bias circuits and linearization circuits. The single IC core universally handles different modes by selectively activating appropriate circuit segments, achieving both performance optimization and integration.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The bias circuits and linearization circuits are dynamically configured based on the operating mode. The system transitions between different biasing schemes and linearization paths depending on whether 2G, 4G, or 5G mode is active, allowing optimal performance for each mode while maintaining a single integrated device structure.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250167743A1Power amplifier
Publication Date: 2025.05.22 SAMSUNG ELECTRO MECHANICS CO LTD
  • US20250167743A1 patent drawing
  • US20250167743A1 patent drawing
  • US20250167743A1 patent drawing

AI summary

A power amplifier includes a first power transistor configured to amplify a first input Radio Frequency (RF) signal, and output a first output RF signal; a first bias circuit configured to operate in a first communication mode, and comprising a first transistor configured to supply a first bias current to the first power transistor; and a second bias circuit configured to operate in a second communication mode, and comprising a second transistor configured to supply a second bias current to the first power transistor.