Multiple Back Gate Transistor With Isolated Contacts
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Solution Overview
Problem
Ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology in semiconductor devices is limited by the ability to apply only a single bias to a single location, restricting its functionality and increasing design and manufacturing costs due to the need for specific applications.
Innovation Solution
The implementation of multiple isolated contact regions and backside conductive contacts under the transistor body, allowing for independent bias application at different locations, which enables manipulation of the threshold voltage and key parameters such as drain-to-source breakdown voltage, transconductance, and threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single bias is applied to a single location of the transistor body, then the device structure remains simple, but the functionality is limited and design flexibility is reduced
Solution Approach 1:
The transistor body is divided into multiple segments with isolated contact regions at different locations (e.g., source end, drain end, center). Each segment can be independently biased through separate backside contacts, enabling different functional regions within the same device structure.
Solution Approach 2:
The patent introduces backside contacts through the substrate thickness dimension, allowing bias application from the backside of the transistor rather than only from the front gate. This additional dimensional approach enables independent control of different body regions without complicating the front-side device layout.
2Manufacturing precision
If multiple isolated contact regions are implemented under the transistor body, then device parameter tuning capability is improved, but manufacturing complexity increases
Solution Approach 1:
The body contact region is segmented into multiple isolated contact regions that can be independently formed and biased. This segmentation enables precise control of threshold voltage and other parameters by applying different biases to different regions, while the isolated structure simplifies the formation process compared to continuous contacts.
Solution Approach 2:
Different regions of the transistor body are given different electrical properties through localized contact regions. Each contact region can be optimized for specific functions (e.g., source contact for threshold control, drain contact for breakdown voltage control), allowing local quality enhancement without requiring complex global manufacturing changes.
3Reliability
If specific strictures are designed for specific applications, then application performance is optimized, but design and manufacturing costs increase
Solution Approach 1:
The transistor device is designed with multiple independently biasable contact regions that can be configured for different applications. The same basic device structure can serve multiple functions (analog, digital, RF) by simply changing the bias conditions of different contact regions, eliminating the need for separate device designs for different applications.
Solution Approach 2:
The transistor characteristics are made dynamically adjustable through independent biasing of multiple contact regions. Key parameters such as threshold voltage, transconductance, and breakdown voltage can be dynamically tuned during operation by changing the bias conditions, allowing a single device to adapt to different application requirements without physical redesign.
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to multiple back gate transistor structures and methods of manufacture. The structure includes: a transistor formed over a semiconductor material and an underlying substrate; and multiple isolated contact regions under a body or channel of the transistor, structured to provide a local potential to the body of the transistor at different locations.