Multiple Cycle Spacer Deposition for Profile Uniformity
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Solution Overview
Problem
Existing multiple patterning techniques in electronic device manufacturing face challenges with spacer profile faceting, footing, and width non-uniformity, leading to difficulties in maintaining critical dimension (CD) and critical dimension uniformity (CDU) of patterned features, which increases manufacturing costs and design rule limitations.
Innovation Solution
A single-platform multiple cycle spacer deposition and etch technique is employed, where a spacer layer is repeatedly deposited and etched using different plasma processes to form a multiple cycle spacer with a predetermined thickness, reducing faceting and footing, and improving CD and CDU control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional single-cycle spacer deposition technique is used, then the manufacturing process is simple, but the spacer profile exhibits faceting, footing, and width non-uniformity leading to poor critical dimension control
Solution Approach 1:
The spacer formation process is divided into multiple cycles, where each cycle deposits a portion of the final spacer thickness. This segmentation allows better control over the spacer profile by building it incrementally, reducing faceting and footing effects that occur in single-cycle deposition.
Solution Approach 2:
The process employs periodic alternation between deposition and etching operations across multiple cycles. This periodic action enables precise control of spacer thickness and profile by repeating the deposit-etch sequence, allowing removal of defective portions and refinement of the spacer structure.
2Manufacturing precision
If multiple patterning techniques are used to enhance feature density, then the line density doubles, but the faceting and footing of spacer profile cause difficulties in controlling critical dimension and critical dimension uniformity
Solution Approach 1:
The process deposits more spacer material than the final required thickness in each cycle, then removes the excess through etching. This partial action approach allows the formation of a uniform spacer profile by over-depositing and then selectively removing material to achieve the target dimensions, compensating for pattern loading effects.
Solution Approach 2:
The process changes deposition and etching parameters across multiple cycles to optimize spacer profile. By adjusting process conditions in subsequent cycles based on the results of previous cycles, the method achieves better critical dimension control and reduces the harmful effects of pattern loading.
3Productivity
If existing multiple patterning techniques are used, then feature density is enhanced, but the spacer width non-uniformity due to pattern loading effect leads to significant design rule limitation and high manufacturing cost
Solution Approach 1:
The multiple-cycle spacer formation process serves multiple functions: it creates the spacer structure, controls the profile uniformity, and compensates for pattern loading effects all within a single integrated process sequence. This multi-functionality reduces the need for additional process steps and hard mask transfers, lowering manufacturing cost and improving ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in a spacer with a flatter top portion and reduced width variation, enhancing control over the underlying patterning profile and reducing manufacturing costs by eliminating the need for additional hard mask transfer layers.
Implementation Method 1
A spacer layer is deposited on the first portion using a first plasma process
Implementation Method 2
A spacer layer is deposited on the first portion using a first plasma process
Implementation Method 3
The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process
Data Source
AI summary
A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.