Multiple Plate Line Architecture for Multideck Memory Arrays

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Solution Overview

Problem

The physical limitations of plate line and access line routing in memory devices hinder the increase of memory cell density, read/write speeds, reliability, data retention, and reduce manufacturing costs in multideck memory arrays.

Innovation Solution

The implementation of a multiple plate line architecture for multideck memory arrays, which includes ferroelectric memory cells with three access lines (plate line, digit line, and word line) and efficient area utilization schemes such as on-pitch via structures, allows for the placement of support circuitry components both under and outside the array, facilitating efficient plate line routing and access operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single plate line architecture is used in multideck memory arrays, then the routing complexity is reduced, but the memory cell density and access speed are limited

Engineering Contradiction:
Improverouting complexityVSAvoidmemory cell density
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent divides the plate line system into multiple independent plate lines (first plate line and second plate line) that can be independently controlled and routed. This segmentation allows each plate line to serve specific memory decks, enabling more efficient routing and higher cell density without overwhelming complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a two-dimensional single plate line routing to a three-dimensional multideck architecture with multiple plate lines extending in vertical and horizontal dimensions. This dimensional expansion allows memory cells to be accessed from multiple decks simultaneously, increasing density while maintaining manageable routing through spatial distribution

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If more plate lines are added to increase memory cell density, then the memory cell density improves, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvememory cell densityVSAvoidplate line architecture complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent merges multiple memory decks into a unified multideck structure where first and second plate lines work together with digit lines and word lines to access memory cells across decks. This merging allows shared routing resources and coordinated operation, achieving high density while controlling complexity through integrated design

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The plate lines are designed to serve multiple functions: they can independently access different memory decks, work in combination with digit lines for selective cell access, and support both read and write operations. This multi-functionality reduces the need for separate dedicated lines for each function, controlling overall complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If traditional access line routing is used, then the manufacturing process is simpler, but the read/write speeds and data retention are reduced

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidread/write speed
Core Design Contradiction:
Ease of manufactureVSSpeed

Solution Approach 1:

The patent implements dynamic control of multiple plate lines through coordinated activation with digit lines and word lines. The system can dynamically select which plate line to activate based on the target memory deck, enabling fast access to specific decks while maintaining the ability to access multiple decks sequentially or in parallel, improving speed without requiring permanently active complex routing

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11227648B2Multiple plate line architecture for multideck memory array
Publication Date: 2022.01.18 MICRON TECHNOLOGY INC
  • US11227648B2 patent drawing
  • US11227648B2 patent drawing
  • US11227648B2 patent drawing

AI summary

Methods, systems, and devices for multiple plate line architecture for multideck memory arrays are described. A memory device may include two or more three-dimensional arrays of ferroelectric memory cells overlying a substrate layer that includes various components of support circuitry, such as decoders and sense amplifiers. Each memory cell of the array may have a ferroelectric container and a selector device. Multiple plate lines or other access lines may be routed through the various decks of the device to support access to memory cells within those decks. Plate lines or other access lines may be coupled between support circuitry and memory cells through on pitch via (OPV) structures. OPV structures may include selector devices to provide an additional degree of freedom in multideck selectivity. Various number of plate lines and access lines may be employed to accommodate different configurations and orientations of the ferroelectric containers.