Multiple-Pole Input Impedance Matching Circuit for RF Power Amplifiers

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Solution Overview

Problem

Conventional RF power amplifiers for cellular base stations face limitations due to impedance dispersion and quality factor limitations across multiple frequency bands, particularly in Doherty amplifier designs, where single-pole input impedance matching circuits result in high impedance dispersion and phase linearity variations.

Innovation Solution

Implementing a multiple-pole input impedance matching circuit within the RF amplifier's bandwidth, with at least one pole located between the lower and upper cutoff frequencies and another outside the bandwidth, to enhance bandwidth and in-band gain flatness, and achieve near-zero linear phase distortion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single-pole input impedance matching circuit is used, then the device complexity is reduced, but the bandwidth and impedance matching performance deteriorate due to high impedance dispersion

Engineering Contradiction:
Improveinput impedance matching circuit complexityVSAvoidbandwidth coverage
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The input impedance matching circuit is segmented into multiple poles (at least two poles) instead of using a single pole. This segmentation allows each pole to contribute to different aspects of impedance matching across the frequency band, thereby expanding the overall bandwidth and reducing impedance dispersion while maintaining manageable circuit complexity through modular design.

Inventive Principle:
Principle #1Segmentation

2Ease of manufacture

If a single-pole input impedance matching circuit is used, then the manufacturing is simpler, but the in-band gain flatness deteriorates due to quality factor limitations

Engineering Contradiction:
Improvecircuit implementation simplicityVSAvoidin-band gain flatness
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The matching circuit uses multiple poles to divide the frequency coverage task, allowing each pole to be optimized for specific frequency ranges. This improves in-band gain flatness by distributing the matching function across multiple elements, reducing the burden on any single component and mitigating quality factor limitations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention adjusts the parameters of the multiple poles (such as their frequencies and Q-factors) to optimize performance. By carefully selecting pole locations and characteristics, the circuit achieves improved in-band gain flatness and reduced phase linearity variation while remaining manufacturable with standard components.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If a single-pole input impedance matching circuit is used, then the circuit design is simpler, but the phase linearity varies significantly across the band

Engineering Contradiction:
Improvematching circuit structureVSAvoidphase linearity
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The phase compensation function is distributed across multiple poles in the input impedance matching circuit. Each pole contributes to phase correction at different frequency ranges, resulting in improved overall phase linearity across the entire operating band. This segmented approach to phase control reduces the phase linearity variation that would occur with a single-pole design.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10141899B2Broadband radio frequency power amplifiers, and methods of manufacture thereof
Publication Date: 2018.11.27 NXP USA INC
  • US10141899B2 patent drawing
  • US10141899B2 patent drawing
  • US10141899B2 patent drawing

AI summary

An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.