Multiple Silicide Regions for Low-Resistance Semiconductor Contacts
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Solution Overview
Problem
As the semiconductor industry continues to reduce minimum feature sizes, challenges arise in manufacturing semiconductor devices with multiple silicide regions, requiring innovative processes to maintain integration density and improve device performance.
Innovation Solution
The method involves depositing a first dual material silicide precursor layer on source/drain regions, forming a first silicide phase, and then changing this phase to a second phase, allowing the second silicide precursor to diffuse and form a third silicide phase, which may include a segregated silicide region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to improve integration density, then more components can be integrated into a given area, but manufacturing challenges and process complexity increase
Solution Approach 1:
The silicide formation process is segmented into multiple distinct phases: first forming a initial silicide layer, then selectively removing portions, and finally forming additional silicide regions. This segmentation allows different silicide materials to be placed in specific locations, enabling complex device structures while maintaining manufacturability through standardized process modules.
Solution Approach 2:
Different silicide materials and phases are applied to different regions of the device based on local requirements. For example, low-resistance silicides are used in contact regions while other materials are used in gate regions. This local optimization allows the device to meet performance requirements in each specific area without requiring complex processes across the entire structure.
2Reliability
If multiple silicide regions are formed to reduce contact resistance, then device performance improves, but process steps and manufacturing complexity increase
Solution Approach 1:
A first silicide layer is formed preliminarily across the device structure before final patterning. This preliminary silicide formation provides a foundation that reduces contact resistance early in the process, and subsequent selective removal and reformation steps build upon this foundation rather than creating silicide regions from scratch, thereby reducing overall process complexity.
Solution Approach 2:
The process utilizes changes in silicide phase and material properties at different stages. By controlling deposition conditions, temperature, and material composition, the process transforms silicide from one phase to another and from one material to another, enabling multiple functional regions to be created through controlled parameter changes rather than entirely separate formation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the tuning of silicide materials for N-type and P-type devices, reducing contact resistances and improving dopant concentrations, thereby enhancing the performance and integration density of semiconductor devices.
Implementation Method 1
changing the first phase of the first silicide to a second phase of the first silicide, the second silicide precursor being soluble within the second phase of the first silicide, and forming a second silicide with the second silicide precursor and the second phase of the first silicide
Data Source
AI summary
A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.