Multiple Trigger Photoresist Composition for Fine Pattern Resolution

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Solution Overview

Problem

Current photoresist materials face challenges in achieving fine resolution and reducing line edge roughness and exposure latitude, particularly due to acid migration and the need for post-exposure baking, which can lead to line broadening and reduced resolution in semiconductor device manufacturing.

Innovation Solution

A multiple trigger negative-working photoresist composition is developed, comprising polymers, oligomers, or monomers with crosslinkable functionalities protected by acid labile groups, combined with an acid activated crosslinker and a photoacid generator, allowing for improved resolution and reduced acid migration through a two-step crosslinking process triggered by actinic radiation and post-exposure baking.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional photoresist materials are used with post-exposure baking, then crosslinking reaction is enhanced, but line broadening occurs and resolution decreases

Engineering Contradiction:
Improvecrosslinking reaction completenessVSAvoidline resolution
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent divides the crosslinking process into two distinct stages: (1) inductive stage where photo-generated acid activates crosslinking functionalities during exposure, and (2) propagative stage where heat-triggered acid generation completes crosslinking during post-exposure bake. This segmentation allows each stage to serve its specific function optimally, reducing line broadening while ensuring complete crosslinking.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies preliminary action by initiating the crosslinking reaction during the exposure step itself through photo-generated acid activation. This preliminary crosslinking occurs before post-exposure baking, creating initial crosslinks that prevent excessive acid migration and line broadening during the subsequent heating step.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If photoacid generator is used to trigger crosslinking, then sensitivity is improved, but acid migration increases causing resist blur

Engineering Contradiction:
Improveexposure sensitivityVSAvoidpattern fidelity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent segments the acid generation function into two components: a photoacid generator that provides initial acid for activating crosslinking functionalities (improving sensitivity), and a heat-triggered acid generator that provides additional acid during post-exposure bake (reducing migration). This segmentation allows each acid generator to operate at its optimal trigger point, reducing overall acid migration while maintaining high sensitivity.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If all crosslinkable functionalities are protected with acid labile groups, then crosslinking control is improved, but additional processing steps are required

Engineering Contradiction:
Improvecrosslinking controlVSAvoidprocessing steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges the deprotection and crosslinking steps into a single integrated process. The acid labile protecting groups are designed to be removed by the same photo-generated acid or heat-triggered acid that initiates crosslinking, eliminating the need for separate deprotection and crosslinking steps while maintaining precise crosslinking control.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11474430B2Multiple trigger monomer containing photoresist compositions and method
Publication Date: 2022.10.18 IRRESISTIBLE MATERIALS
  • US11474430B2 patent drawing
  • US11474430B2 patent drawing
  • US11474430B2 patent drawing

AI summary

The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.