Multiple-Write Flash Memory Cell Segmentation for Data Modification

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Solution Overview

Problem

Conventional flash memory devices face inefficiencies and wear due to frequent data updates, requiring entire database rewriting and invalidation, which consumes processing resources and reduces device longevity.

Innovation Solution

Implementing a flash memory system with a first region of single-write flash memory cells for occasional updates and a second region of multiple-write flash memory cells for frequent updates, managed by a memory controller to optimize storage and reduce erase operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If frequent data updates are performed in conventional flash memory, then data modification capability is improved, but device wear increases and reliability deteriorates due to finite write-erase cycles

Engineering Contradiction:

Improvedata modification capabilityVSAvoiddevice longevity

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The flash memory device is divided into multiple regions with different write capabilities. Specifically, the patent segments the flash memory into areas that can be erased and reprogrammed independently, allowing frequent updates in certain regions without requiring erasure of the entire memory device. This segmentation enables data modification while preserving other regions, thereby reducing overall wear and extending device longevity.

Inventive Principle:

Principle #1Segmentation

2Adaptability or versatility

If entire database is rewritten for data modification, then data update is achieved, but processing overhead and power consumption increase

Engineering Contradiction:

Improvedata update capabilityVSAvoidpower consumption

Core Design Contradiction:

Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The patent extracts and isolates the data modification operation from the entire database rewriting process. By enabling updates in specific regions without erasing the complete database, the system removes the unnecessary overhead of rewriting unchanged data. This extraction approach significantly reduces processing overhead and power consumption while maintaining data update capability.

Inventive Principle:

Principle #2Taking out (Extraction)

3Productivity

If frequent erase operations are performed, then memory is freed for new data, but processing resources are consumed and device wear increases

Engineering Contradiction:

Improvememory availabilityVSAvoidprocessing overhead

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The flash memory is segmented into multiple independently erasable regions. This segmentation allows the system to perform targeted erasure operations only on regions that need to be freed, rather than erasing the entire memory device. Consequently, memory availability is maintained while processing overhead and device wear from unnecessary erase operations are reduced.

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS9070451B1Modifying data stored in a multiple-write flash memory cell

Publication Date: 2015.06.30 MARVELL ASIA PTE LTD

AI summary

Flash memory stored data modification is described. In embodiments, a flash memory system includes flash memory and a memory controller that manages data write and erase operations to the flash memory. The flash memory includes a first flash memory region of single-write flash memory cells that are each configured for a data write operation and a corresponding erase operation before a subsequent data write operation. The flash memory also includes a second flash memory region of multiple-write flash memory cells that are each configured for multiple data write operations before an erase operation.