Multi-Stack RF Module with Through-Electrode Integration
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Solution Overview
Problem
Existing RF module manufacturing processes are complex and difficult to miniaturize due to the separate integration of RF elements on substrates, making it challenging to produce small and lightweight wireless communication devices.
Innovation Solution
A multi-stack RF module is fabricated using a wafer-based process, where multiple RF elements are packaged in a single chip with a base substrate, a middle substrate, and a cap substrate, connected via through electrodes and bonding pads to simplify the manufacturing process and reduce size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If RF elements are manufactured separately and then integrated on a substrate, then each element can be independently fabricated with high precision, but the manufacturing process becomes complicated and device size increases
Solution Approach 1:
The patent combines multiple RF elements (filters, duplexers, etc.) and their substrates into a single integrated structure. Multiple substrates are stacked and bonded together with RF elements formed on each substrate, creating a unified module that is manufactured as one complete unit rather than assembling separate components.
Solution Approach 2:
The patent transitions from planar integration to three-dimensional stacking. Multiple substrates are arranged in vertical layers with RF elements distributed across different height levels. Through-electrodes penetrate vertically through multiple substrates to establish electrical connections between layers, utilizing the vertical dimension to reduce lateral footprint and simplify interconnections.
2Manufacturing precision
If RF elements are manufactured separately and then integrated on a substrate, then each element can be independently fabricated, but the device size and weight increase
Solution Approach 1:
The patent combines multiple RF elements and substrates into a single integrated module, eliminating the need for separate housing and mounting structures for each element. This consolidation reduces overall device volume and weight while maintaining independent fabrication precision through wafer-level processing of each substrate before integration.
Solution Approach 2:
The patent implements a nested structure where smaller RF elements are formed on substrates that are themselves nested within a larger stacked assembly. Multiple substrate layers are bonded together with RF elements distributed throughout the volume, creating a compact nested arrangement that minimizes external dimensions and weight.
3Volume of moving object
If multiple RF elements are integrated on a single substrate, then device size is reduced, but manufacturing complexity and difficulty increase
Solution Approach 1:
The patent segments the integration process by manufacturing each substrate with its RF elements separately on individual wafers using standard semiconductor fabrication techniques. This segmentation allows each substrate to be optimized and fabricated independently with high precision, then the pre-fabricated substrates are bonded together in a standardized stacking sequence, reducing overall integration complexity.
Solution Approach 2:
The patent resolves integration complexity by moving from two-dimensional planar integration to three-dimensional stacking. This dimensional transition allows multiple substrates to be connected through vertical through-electrodes rather than requiring complex lateral interconnections, simplifying the routing and reducing signal interference while achieving compact volume.
4Reliability
If a multi-stack structure with through electrodes is used, then electrical connectivity between multiple elements is improved, but manufacturing process steps increase
Solution Approach 1:
The patent improves electrical connectivity by implementing vertical through-electrodes that penetrate multiple substrates in the stack. This vertical connection approach provides direct, short transmission paths between RF elements on different layers, improving signal integrity and reducing parasitic effects compared to lateral connections, while the through-electrode formation is integrated into the standard semiconductor fabrication process.
Solution Approach 2:
The patent performs preliminary formation of through-electrodes and bonding pads on each substrate during the wafer fabrication stage before stacking. This preliminary action ensures that connection structures are precisely formed and aligned on each substrate individually, then the substrates are bonded together with pre-established electrical pathways, simplifying the overall assembly process and improving reliability.
Data Source
AI summary
A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.