Multi-Station Layer Deposition for Void-Free Gap Filling
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Solution Overview
Problem
Conventional semiconductor device scaling techniques face challenges in filling gaps such as recesses, trenches, and vias without forming gaps or voids, which hinders the advancement of integrated circuit technology.
Innovation Solution
A method and apparatus for depositing a layer onto a substrate using a process chamber with multiple process stations, where a preliminary layer is formed using first active species and then transformed using second active species, generated by different generators, to ensure effective filling and modification of the layer without voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition techniques are used to fill gaps, recesses, trenches, and vias, then the substrate features are filled with material, but gaps or voids form in the filled structures
Solution Approach 1:
The deposition process is divided into multiple sequential steps with different active species generators, where each generator deposits material with specific properties. This segmented approach allows optimization of each deposition step to prevent void formation while achieving complete gap filling.
Solution Approach 2:
The patent changes physical and chemical parameters between deposition steps by using different active species generators with different characteristics. This includes varying plasma conditions, precursor types, and deposition rates to achieve conformal filling without voids.
2Manufacturing precision
If multiple active species generators are used to improve filling quality, then conformal deposition with high step coverage is achieved, but the device complexity increases
Solution Approach 1:
The process chamber is designed as a universal platform that can accommodate multiple different active species generators, each optimized for specific deposition requirements. This multi-functional design allows the same chamber to perform various deposition tasks without requiring separate specialized equipment for each function.
Solution Approach 2:
A preliminary layer is deposited using the first active species generator before the main filling deposition. This preliminary action prepares the substrate surface and creates a foundation that enables subsequent conformal deposition with high step coverage, reducing the complexity of achieving uniform filling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables conformal layer deposition with high step coverage, effectively filling complex substrate features and improving the quality and density of integrated circuits.
Implementation Method 1
forming a preliminary layer onto the substrate at one or more first process stations of the plurality of process stations, the process of forming a preliminary layer comprising exposing the substrate to first active species formed using a first active species generator
Implementation Method 2
transforming the preliminary layer at one or more second process stations of the plurality of process stations separate from the one or more first process stations, the process of transforming the preliminary layer comprising exposing the preliminary layer to second active species formed using a second active species generator different from the first active species generator
Data Source
AI summary
This disclosure relates to a method for depositing a layer onto a substrate and a semiconductor processing apparatus. The semiconductor processing apparatus comprises a process chamber comprising a housing defining an inner volume of the process chamber and a plurality of process stations inside the inner volume for holding a substrate. The semiconductor processing apparatus further comprises a plurality of active species generators comprising at least a first active species generator configured to provide first active species to at least one or more first process stations of the plurality of process stations and a second active species generator configured to provide second active species to at least one or more second process stations of the plurality of process stations.