Multivalent Metal Nanoparticle EUV Resist Composition
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Solution Overview
Problem
Current resist compositions for EUV lithography face challenges with high doses of EUV radiation required due to low absorption cross-sections, leading to blurring and chemical noise, which limits feature size and throughput in semiconductor production.
Innovation Solution
A resist composition using multivalent metal-containing nanoparticles and/or nanoclusters with multivalent ligands and/or organic linkers that control secondary electron diffusion, enhancing EUV absorption while minimizing blur through controlled bond formation and breakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If chemically amplified resists (CAR) based on polymers are used for EUV lithography, then the resist can be exposed to EUV radiation, but the absorption cross-section of carbon atoms in the EUV spectral range is low, requiring high doses of EUV radiation
Solution Approach 1:
The patent changes the chemical composition parameters of the resist by incorporating metal oxide nanoparticles (such as hafnium oxide, tin oxide, or zirconium oxide) with higher EUV absorption cross-sections than carbon-based polymers. This parameter change enables more efficient EUV photon absorption, reducing the required exposure dose and time while maintaining pattern fidelity
Solution Approach 2:
The patent creates a composite resist system combining metal oxide nanoparticles with organic polymers and ligands. The metal oxide component provides enhanced EUV absorption, while the organic matrix provides solubility and pattern definition. This composite approach resolves the contradiction by leveraging the complementary strengths of different materials to achieve both high absorption and functional performance
2Use of energy by moving object
If high doses of EUV radiation are used to compensate for low absorption cross-section, then sufficient energy is delivered to the resist, but this causes blurring and chemical noise which limits feature size
Solution Approach 1:
By changing the absorber material from carbon-based polymers to metal oxide nanoparticles with higher atomic numbers, the resist achieves sufficient EUV energy absorption at lower doses. This parameter change prevents the accumulation of chemical noise and blurring effects that occur with high-dose exposure, thereby maintaining manufacturing precision for small features
Solution Approach 2:
The patent employs metal oxide nanoparticles that can be sacrificially consumed or transformed during exposure. These nanoparticles absorb EUV photons and undergo controlled decomposition or transformation, converting the harmful high-energy radiation into localized chemical changes without causing widespread blurring. This disposable approach to energy absorption protects the overall pattern fidelity
3Use of energy by moving object
If metal oxide nanoparticles are used to increase EUV absorption cross-section, then fewer photons are required, but secondary electrons may diffuse through the system causing high blur
Solution Approach 1:
The patent introduces ligands as intermediary molecules that bind to metal oxide nanoparticles and control the behavior of secondary electrons. These ligands act as mediators that either trap secondary electrons locally or guide their energy deposition to specific locations, preventing uncontrolled diffusion. This intermediary layer resolves the contradiction by maintaining high absorption efficiency while controlling electron-induced blur through the mediating action of the ligand shell
Solution Approach 2:
The patent creates local quality variations by functionalizing metal oxide nanoparticles with specific ligands that have different electron-interaction properties at different locations. The ligand shell provides localized electron trapping or scattering centers around each nanoparticle, confining secondary electron effects to local regions rather than allowing system-wide diffusion. This local quality approach maintains precision while preserving high absorption efficiency
4Manufacturing precision
If the resist is exposed to electromagnetic radiation for a longer period to achieve required dose, then sufficient exposure is achieved, but the number of chips produced per machine per time period is reduced
Solution Approach 1:
By changing the absorption cross-section parameter through the use of metal oxide nanoparticles, the resist achieves the required exposure dose in shorter times. This parameter change directly improves productivity by reducing the exposure time per wafer, allowing more chips to be produced per machine per time period while maintaining the necessary exposure dose for pattern fidelity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved EUV absorption with reduced blur and chemical noise, allowing for smaller feature sizes and increased semiconductor production throughput.
Implementation Method 1
Upon EUV exposure, photons are absorbed by the nanoparticles and this leads to the generation of secondary electrons
Implementation Method 2
The generation of secondary electrons is how a high-energy photon or electron loses most of its energy
Implementation Method 3
The secondary electrons in the resist diffuse and may generate further secondary electrons with lower energies
Implementation Method 4
one or both of components a) or b) are multivalent... controlled bond formation and breakage
Data Source
AI summary
A resist composition having a) metal-containing nanoparticles and/or nanoclusters, and b) ligands and or organic linkers, wherein one or both of a) or b) are multivalent. A resist composition wherein: the resist composition is a negative resist and the nanoparticles and/or nanoclusters cluster upon crosslinking of the ligands and/or organic linkers following exposure to electromagnetic radiation or an electron beam; or the resist composition is a negative resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam allowing the nanoparticles and/or nanoclusters to cluster together; or the resist composition is a positive resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam.