Multivalent Metal Oxide Memory Cell Surface Treatment
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Solution Overview
Problem
Current methods for forming non-volatile memory cells with programmable materials between electrodes, such as RRAM cells, face challenges in achieving stable data retention and memory effects, particularly in maintaining resistance states over time.
Innovation Solution
The formation of memory cells using a multivalent metal oxide portion and an oxygen-containing dielectric portion, where the outer surface of these materials is treated with an organic base, followed by chemical mechanical polishing and additional organic base treatments, to enhance the programmability and data retention properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to form non-volatile memory cells with programmable materials, then the basic memory cell structure can be formed, but stable data retention and memory effects are not achieved
Solution Approach 1:
The patent applies preliminary action by treating the outer surface of the multivalent metal oxide or oxygen-containing dielectric material with an organic base before forming the complete memory cell structure. This pre-treatment modifies the surface properties to enhance subsequent programming operations and improve data retention stability, addressing the reliability issue before the cell is fully formed and tested
Solution Approach 2:
The patent changes physical or chemical parameters of the programmable material by treating it with an organic base, which modifies the surface chemistry and oxygen vacancy distribution. This parameter change enables the material to exhibit stable memory effects and improved data retention, resolving the contradiction between achieving reliable performance and maintaining manufacturing simplicity
2Ease of manufacture
If the memory cell structure is simplified for easier manufacturing, then production complexity is reduced, but resistance state stability over time deteriorates
Solution Approach 1:
The organic base treatment acts as an intermediary step that bridges the simple memory cell structure and the desired stable resistance states. This intermediate treatment process modifies the programmable material properties without requiring complex structural changes, allowing simplified manufacturing to coexist with stable resistance state composition
Solution Approach 2:
By changing the chemical parameters of the programmable material through organic base treatment, the patent achieves stable resistance states without modifying the overall cell structure. This parameter change approach maintains manufacturing simplicity while improving composition stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves memory cell performance by maintaining a significant memory effect and data retention, as shown by the comparison of reading current retention quantile plots, with the treated cells demonstrating better retention and reduced loss in resistance states compared to prior art methods.
Implementation Method 1
the outer surface of these materials is treated with an organic base
Implementation Method 2
followed by chemical mechanical polishing and additional organic base treatments
Implementation Method 3
Such materials may be programmed by moving oxygen species (for instance, oxygen ions) within and between the different portions
Data Source
AI summary
A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.