Multizone Baffle Gas Delivery for Deposition Uniformity
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in achieving uniform deposition thickness across substrates, particularly in high-aspect-ratio gaps, due to non-uniform gas distribution and plasma characteristics in HDP and ICP processes.
Innovation Solution
The use of a multizone baffle with frustoconical surfaces and a gas delivery system that includes a manifold connected to the baffle, which provides controlled gas flow paths to ensure uniform gas distribution and improved plasma uniformity in the processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional gas distribution systems are used in HDP and ICP processes, then deposition can be achieved, but deposition thickness uniformity across substrates deteriorates
Solution Approach 1:
The gas distribution system is divided into multiple independent zones (first zone, second zone, third zone) with separate gas flow control. Each zone has its own gas feed passages and discharge passages, allowing independent adjustment of gas flow parameters to achieve uniform deposition across different regions of the substrate
Solution Approach 2:
Different zones of the gas distribution system are designed with different frustoconical surface angles and gas flow characteristics tailored to local deposition requirements. The first zone, second zone, and third zone each have optimized local geometry to compensate for position-dependent deposition non-uniformity
2Productivity
If gas flow is increased to improve deposition rate, then productivity improves, but deposition uniformity deteriorates
Solution Approach 1:
The gas flow system is segmented into multiple zones with independent flow control. Each zone can operate at optimized gas flow rates to maintain uniform deposition, while the total deposition rate across all zones achieves high productivity
Solution Approach 2:
The gas flow rates in different zones can be dynamically adjusted during deposition to maintain uniformity as the process progresses. Flow rates are independently controllable to compensate for changing deposition conditions while maintaining overall high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances deposition thickness uniformity across substrates, improves film uniformity, and allows for fine adjustment of deposition parameters, thereby addressing the challenges of non-uniformity in existing HDP and ICP processes.
Implementation Method 1
The second end including at least a first frustoconical surface and a second frustoconical surface extending around the first frustoconical surface
Implementation Method 2
Silicon oxide is widely used as dielectric layer in the manufacture of semiconductor devices. As is well known, a silicon oxide film layer, a silicon nitride film layer, or other layers can be deposited by a thermal chemical-vapor deposition ('CVD') process or by a plasma-enhanced chemical-vapor deposition ('PECVD') process.
Implementation Method 3
In a conventional plasma-deposition process, a controlled plasma is formed to decompose and/or energize reactive species to produce the desired film.
Implementation Method 4
One factor that allows films deposited by such HDP-CVD techniques to have improved gapfill characteristics is the biasing of the substrate to attract ions from the plasma to simultaneously sputter and deposit the material being deposited. Sputtering is a mechanical process by which a portion of the deposited material is ejected by impact of plasma ions thereagainst
Data Source
AI summary
A baffle for providing process gas into a processing volume of a vacuum process chamber including body having a first end connectable to a gas source and a second end distal to the first end, the second end including at least a first frustoconical surface and a second frustoconical surface extending around the first frustoconical surface, and, an outer surface extending from the proximal end to the distal end, a first gas feed passage extending inwardly of the body from the proximal end, the first gas feed passage disposed inwardly of the body, at least one first discharge passage extending from the distal end of the first gas feed passage and opening through the first frustoconical surface, at least one second gas feed passage extending inwardly of the body from the proximal end thereof, the second gas passage disposed inwardly of the body and fluidly isolated from the first gas feed passage.