MWT Silicon Solar Cell Metallization via Low Fire-Through Paste

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Solution Overview

Problem

The production of MWT silicon solar cells with n-type silicon bases faces challenges in achieving efficient electric contact and adhesion of metallization pastes without damaging the p-type emitter, leading to potential shunting characteristics.

Innovation Solution

A process involving a conductive metal paste with poor fire-through capability, comprising silver, copper, or nickel, along with a p-type dopant and organic vehicle, is applied to the holes of the silicon wafer, fired at 700-900°C to form anodic back contacts, ensuring good ohmic contact and adhesion without damaging the p-type emitter.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conductive metal paste with good fire-through capability is used to form metallization in holes, then the electric contact is improved, but the p-type emitter is damaged leading to shunting characteristics

Engineering Contradiction:
Improveelectric contactVSAvoidemitter damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The paste composition is modified by adjusting the metal particle size distribution, glass frit content, and organic vehicle formulation to reduce fire-through capability. This parameter change allows the paste to form adequate electrical contact without penetrating and damaging the underlying p-type emitter layer during the firing process.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The conductive metal paste is formulated as a composite material containing metal particles (silver, copper, or nickel), glass frit, and organic vehicle in specific proportions. This composite structure provides controlled rheology and firing behavior, enabling the paste to adhere to and conduct electricity through the n-type silicon base while stopping before damaging the p-type emitter.

Inventive Principle:
Principle #40Composite materials

2Duration of action of stationary object

If the metallization paste is fired at high temperature to improve adhesion, then the service life is improved, but the p-type emitter is damaged

Engineering Contradiction:
Improveservice lifeVSAvoidemitter damage
Core Design Contradiction:
Duration of action of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The firing temperature profile is optimized to balance adhesion and emitter protection. The paste is designed to achieve adequate bonding at temperatures that do not exceed the emitter's thermal tolerance, preventing damage while ensuring long-term durability of the electrical contact.

Inventive Principle:
Principle #35Parameter changes

3Object-affected harmful factors

If the conductive metal paste has poor fire-through capability, then the p-type emitter is protected, but the electric contact and adhesion are insufficient

Engineering Contradiction:
Improveemitter integrityVSAvoidelectric contact
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The paste formulation is precisely tuned to achieve the optimal fire-through capability - not too strong to damage the emitter, but not too weak to fail establishing electrical contact. This is accomplished by controlling metal particle size, glass frit composition, and organic binder content to create a paste that forms reliable contacts while protecting the underlying p-type emitter.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This process enhances the electric efficiency of MWT silicon solar cells by providing a long service life with improved adhesion and reduced risk of shunting, while maintaining the integrity of the p-type emitter.

Implementation Method 1

firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C.

Methodology Applied
Scientific EffectFiring: Sintering

Data Source

PatentUS9054242B2Process for the production of a MWT silicon solar cell
Publication Date: 2015.06.09 SOLAR PASTE LLC

AI summary

A process for the production of a MWT silicon solar cell comprising the steps:(1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes,(2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization,(3) drying the applied conductive metal paste, and(4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C.,wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.