N-type Dopant Source in Transparent Conductive Substrate
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Solution Overview
Problem
Current photovoltaic devices face challenges in achieving high energy yields while maintaining low manufacturing costs, necessitating advancements in photovoltaic device efficiency and cost reduction.
Innovation Solution
A transparent conductive substrate with an n-type dopant source is introduced, allowing controlled dopant diffusion into the active material layer during semiconductor processing, increasing carrier density and enhancing energy output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional photovoltaic devices are used, then manufacturing costs are controlled, but energy yields are insufficient
Solution Approach 1:
The patent incorporates an n-type dopant source into the substrate structure before device assembly, enabling dopant diffusion to occur during initial semiconductor processing rather than requiring separate doping steps. This preliminary action increases carrier density in the active material layer, thereby improving energy yield without adding complex post-processing steps that would increase manufacturing cost
Solution Approach 2:
The patent modifies the substrate structure by integrating an n-type dopant source, which changes the carrier concentration parameter in the active material layer. By controlling dopant diffusion during semiconductor processing, the carrier density is optimized to enhance energy yield while maintaining compatibility with existing manufacturing processes
2Productivity
If carrier density in active material layer is increased, then energy yield improves, but manufacturing complexity increases
Solution Approach 1:
The patent merges the dopant source integration with the substrate structure, combining multiple functions into a single component. The n-type dopant source is incorporated into the substrate during manufacturing, eliminating the need for separate doping equipment and processes, thus increasing carrier density without proportionally increasing manufacturing complexity
Solution Approach 2:
The dopant source in the substrate structure performs self-service by automatically diffusing dopants into the active material layer during standard semiconductor processing. This self-diffusion mechanism eliminates the need for external doping equipment and complex process control, achieving increased carrier density through the substrate's own structural design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in improved energy yields and reduced manufacturing costs by optimizing carrier concentration in photovoltaic devices, specifically through the controlled introduction and diffusion of n-type dopants in the substrate structure.
Implementation Method 1
the n-type dopant intentionally introduced into the substrate structure diffuses into the active material layer of the photovoltaic device
Implementation Method 2
A photovoltaic device converts the energy of sunlight directly into electricity by the photovoltaic effect
Data Source
AI summary
Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.