N-Type Logic Gate Circuit With Clamping for Rail-to-Rail Output

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Solution Overview

Problem

Conventional logic gate circuits requiring P-type transistors face issues in fabrication processes where they cannot be made, leading to increased power consumption and slower response times due to leakage currents and lack of rail-to-rail characteristics when using N-type transistors as replacements.

Innovation Solution

A logic gate circuit design utilizing only N-type transistors, including a capacitor and clamping circuit, to achieve fast response speed and rail-to-rail characteristics without additional power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a pull-up resistor is used to replace the P-type transistor, then the logic gate circuit can be fabricated in processes where P-type transistors are unavailable, but leakage current increases causing additional power consumption

Engineering Contradiction:
Improvefabrication compatibilityVSAvoidpower consumption
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent changes the operating parameters of N-type transistors by using both enhancement-mode and depletion-mode devices with specific threshold voltages. The depletion-mode transistor is biased to operate in a specific region that enables rail-to-rail output while minimizing leakage, resolving the contradiction between fabrication compatibility and power consumption.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite transistor configuration combining enhancement-mode and depletion-mode N-type transistors working together. This composite structure leverages the complementary characteristics of both transistor types to achieve low power consumption while maintaining compatibility with fabrication processes that cannot produce P-type transistors.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If a pull-up resistor is used to replace the P-type transistor, then the logic gate circuit can be fabricated in processes where P-type transistors are unavailable, but response speed decreases due to slower output transition

Engineering Contradiction:
Improvefabrication compatibilityVSAvoidresponse speed
Core Design Contradiction:
Ease of manufactureVSSpeed

Solution Approach 1:

The patent optimizes the electrical parameters of the transistor circuit, specifically using the depletion-mode transistor's unique characteristics to provide a low-impedance pull-up path during output transitions. This parameter optimization enables fast rising edges while maintaining fabrication compatibility.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a dynamic circuit configuration where the depletion-mode transistor actively participates in the switching process. During output transitions, the depletion-mode transistor provides enhanced drive capability, dynamically improving response speed while maintaining compatibility with the fabrication process.

Inventive Principle:
Principle #15Dynamics

3Ease of manufacture

If only N-type transistors are used, then the logic gate circuit can be fabricated in processes where P-type transistors are unavailable, but rail-to-rail characteristics are not achieved

Engineering Contradiction:
Improvefabrication compatibilityVSAvoidoutput voltage precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent precisely controls the threshold voltages and bias conditions of the N-type transistors. The depletion-mode transistor is specifically biased to enable the output to reach both the positive and negative supply rails, achieving rail-to-rail characteristics that were previously only possible with P-type transistors.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The depletion-mode N-type transistor acts as an intermediary element that enables the circuit to achieve rail-to-rail output voltages. It mediates between the enhancement-mode transistor and the load, providing the necessary voltage levels to reach both supply rails while maintaining fabrication compatibility.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250309900A1Logic gate circuit
Publication Date: 2025.10.02 CHIP GAN POWER SEMICON CORP
  • US20250309900A1 patent drawing
  • US20250309900A1 patent drawing
  • US20250309900A1 patent drawing

AI summary

A logic gate circuit includes a first N-type transistor circuit, a second N-type transistor circuit, a capacitor, and a clamping circuit. Each of the first N-type transistor circuit and the second N-type transistor circuit includes at least one N-type transistor. The first N-type transistor circuit has a first terminal, a second terminal, and a third terminal. The second N-type transistor circuit has a fourth terminal and a fifth terminal. The fourth terminal is coupled to the third terminal. The capacitor is coupled between the first terminal and the third terminal. The clamping circuit is coupled to the first terminal and configured to clamp the voltage of the first terminal.