NAND Flash Boot Pre-Read for Retention-Induced Read Retry

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Solution Overview

Problem

Mobile devices experience significant performance degradation due to read retry operations caused by the retention characteristics of NAND flash memory during the first storage device read operation after a long power-off period.

Innovation Solution

A storage system and method that includes a pre-read operation during booting to adjust the optimal read voltage of non-volatile memory devices by transmitting history level update messages and performing pre-read operations to set the optimal read level.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of stationary object

If the storage device uses NAND flash memory with retention characteristics, then data can be stored without power, but read performance degrades after long power-off periods due to optimal read voltage changes

Engineering Contradiction:
Improvedata retention timeVSAvoidread operation reliability
Core Design Contradiction:
Duration of action of stationary objectVSReliability

Solution Approach 1:

The patent performs a pre-read operation during the system booting section to search for and set the optimal read voltage before normal operations begin. This preliminary action prevents performance degradation during subsequent read operations after long power-off periods, resolving the contradiction between data retention and read reliability.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If the storage device performs read retry operations to handle voltage drift, then read accuracy improves, but system boot time increases due to additional operations

Engineering Contradiction:
Improveread voltage accuracyVSAvoidsystem boot time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent performs the optimal read voltage search and setting operation during the system booting section as a preliminary action. By completing the voltage optimization before normal operations, the system avoids time-consuming read retry operations during runtime, thus improving read voltage accuracy without significantly impacting system boot time.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The storage device autonomously performs the pre-read operation to determine and set its own optimal read voltage during booting. This self-service approach eliminates the need for host intervention and read retry operations, improving both read voltage accuracy and system efficiency.

Inventive Principle:
Principle #25Self-service

3Productivity

If the host checks for history level update messages during booting, then read performance is optimized, but communication overhead increases between host and storage device

Engineering Contradiction:
Improvesystem boot speedVSAvoidhost-storage communication protocol
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The storage device autonomously generates and transmits history level update messages to inform the host about optimal read voltage changes. This self-service mechanism allows the host to make informed decisions about pre-read operations without requiring complex continuous monitoring protocols, thus improving system boot speed while keeping communication overhead manageable.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS12530141B2Storage system, storage device, and booting method
Publication Date: 2026.01.20 SAMSUNG ELECTRONICS CO LTD
  • US12530141B2 patent drawing
  • US12530141B2 patent drawing
  • US12530141B2 patent drawing

AI summary

A method of booting a storage system includes performing device booting of a storage device including a non-volatile memory device, determining whether a history level update message indicating that a read failure or a read retry has occurred in the non-volatile memory device is transmitted from the storage device to a host during the device booting, and requesting, by the host, the storage device to perform a pre-read operation to adjust the optimal read level of the non-volatile memory device according to the history level update message. The pre-read operation is performed during a system booting section of the storage system.