3D NAND Contact Plug Formation via Etch Stop Patterns
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Solution Overview
Problem
Three-dimensional non-volatile memory devices face challenges in enhancing operational reliability and integration due to limitations in existing manufacturing methods and structures.
Innovation Solution
A semiconductor device manufacturing method involving alternately stacked conductive and insulating layers, with etch stop patterns and protective patterns to facilitate the formation of contact plugs that penetrate the stack to different depths, ensuring electrical coupling and structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact plugs are formed to penetrate the stack to different depths, then electrical connectivity to multiple conductive layers is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the contact plug formation process into multiple depth levels, creating first contact plugs that penetrate to a first depth and second contact plugs that penetrate to a second depth. This segmentation allows selective electrical connection to different conductive layers (first, second, and third conductive layers) within the stack, achieving comprehensive electrical connectivity while managing manufacturing complexity through systematic process division
Solution Approach 2:
The patent introduces depth as a critical dimension for contact plug differentiation. By varying the penetration depth of contact plugs along the vertical axis, the invention enables selective access to different conductive layers at different depths. This dimensional approach transforms a single-layer connection problem into a multi-layer connection solution, achieving reliable electrical connectivity across multiple layers
2Stability of the object's composition
If etch stop patterns and protective patterns are added, then structural stability during manufacturing is improved, but device complexity increases
Solution Approach 1:
The patent applies etch stop patterns and protective patterns before forming the contact plugs. The etch stop patterns are formed on the stack surface prior to contact plug formation, and protective patterns are formed subsequently. These preliminary structures prevent unwanted etching during contact plug formation and protect the stack structure, ensuring structural stability throughout the manufacturing process while enabling the complex multi-depth contact plug configuration
Solution Approach 2:
The etch stop patterns and protective patterns serve as intermediary structures between the stack and the contact plugs. The etch stop patterns mediate the etching process by providing a controlled stopping point, preventing over-etching into the stack. The protective patterns mediate physical protection during subsequent manufacturing steps. These intermediary elements buffer the interaction between manufacturing processes and the delicate stack structure, maintaining stability
Data Source
AI summary
Provided herein is a method for manufacturing a semiconductor device. The method may include: forming a stack including at least one first material layer and at least one second material layer which are alternately stacked; forming first holes through which the at least one first material layer is exposed; forming etch stop patterns in the respective first holes; forming at least one slit passing through the stack; replacing the at least one first material layer with at least one third material layer through the at least one slit; and forming first contact plugs in the respective first holes, the first contact plugs passing through the etch stop patterns and coupled with the at least one third material layer.