3D NAND Dummy Cell Wiring for Faster Defect Detection
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Solution Overview
Problem
The existing semiconductor memory technologies face challenges in efficiently detecting defects and ensuring high reliability while maintaining low costs and short testing times, particularly in three-dimensionally structured NAND flash memory systems.
Innovation Solution
The implementation of multiple dummy regions connected by common wiring allows for simultaneous testing and defect detection, reducing the complexity and time required for testing, and preventing the collapse of the stack structure during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple dummy regions are tested separately in three-dimensionally structured NAND flash memories, then defect detection coverage is improved, but testing time and cost increase
Solution Approach 1:
The patent connects multiple dummy regions (first dummy region and second dummy region) through common bit lines and word lines, allowing simultaneous voltage application and defect detection across all dummy regions. This merging of testing operations maintains comprehensive defect detection coverage while reducing total testing time by eliminating sequential testing requirements
2Measurement precision
If multiple dummy regions are tested separately, then defect detection accuracy is improved, but manufacturing cost increases
Solution Approach 1:
By sharing common bit lines and word lines across multiple dummy regions, the patent reduces the total number of required wiring structures and testing operations. This merging approach maintains defect detection accuracy through comprehensive coverage while lowering manufacturing costs by reducing material usage and process complexity
Solution Approach 2:
The common bit lines and word lines serve multiple functions: they are used for both normal memory cell operations and for defect detection in dummy regions. This multi-functionality eliminates the need for separate dedicated testing structures, thereby reducing manufacturing cost while maintaining detection accuracy
3Difficulty of detecting and measuring
If separate wiring is used for each dummy region, then defect detection capability is improved, but device complexity increases
Solution Approach 1:
The patent merges the wiring structures by having multiple dummy regions share common bit lines and word lines. This approach maintains full defect detection capability across all dummy regions while significantly reducing device complexity by eliminating redundant wiring, thereby simplifying the overall memory structure
Data Source
AI summary
A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy cells of the first and second dummy regions that are at a same level above the semiconductor substrate.


