NAND Flash Bus Contention Avoidance via Addressing Synchronization

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Solution Overview

Problem

In NAND flash memory systems, bus contention occurs due to misaligned address bits in different addressing schemes used by memory units, leading to erroneous responses and potential failure of entire storage devices if failing memory units are not isolated.

Innovation Solution

Implementing a scheme to synchronize the addressing schemes of all memory units within a storage device to match the scheme of passing units, ensuring aligned address bits and preventing bus contention by configuring failing units to the same addressing scheme as passing units.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If memory units use different addressing schemes (passing units use one scheme, failing units use another), then initialization can proceed for all units, but bus contention occurs due to misaligned address bits

Engineering Contradiction:
Improveinitialization success rateVSAvoidbus contention
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the addressing scheme parameter of failing memory units to match the passing units. Specifically, it modifies the address bit alignment by adjusting the chip select signal timing or address decoding logic for failing units, transforming their addressing parameters to be compatible with the bus protocol used by passing units, thereby eliminating bus contention while maintaining initialization success

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If failing memory units are isolated to prevent bus contention, then bus contention is avoided, but storage device capacity decreases

Engineering Contradiction:
Improvebus contention avoidanceVSAvoidstorage capacity
Core Design Contradiction:
Object-generated harmful factorsVSQuantity of substance

Solution Approach 1:

The patent applies local quality by making each memory unit's addressing characteristics unique to its performance status. Passing units use the standard addressing scheme while failing units use a modified scheme with adjusted address bit alignment. This localized adaptation allows each unit to be optimized for its specific condition, enabling all units to function simultaneously without bus contention while preserving total storage capacity

Inventive Principle:
Principle #3Local quality

3Object-generated harmful factors

If all memory units use the same addressing scheme, then bus contention is prevented, but failing units cannot be distinguished and isolated

Engineering Contradiction:
Improvebus contention preventionVSAvoidfailing unit identification
Core Design Contradiction:
Object-generated harmful factorsVSDifficulty of detecting and measuring

Solution Approach 1:

The patent implements feedback mechanisms where the controller monitors the response of each memory unit during initialization and operation. By observing whether a unit responds correctly to address signals and data commands, the controller can identify which units are failing despite using the same addressing scheme. This feedback loop enables continuous detection and isolation of problematic units while maintaining uniform addressing for bus contention prevention

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10229057B2Method and apparatus for avoiding bus contention after initialization failure
Publication Date: 2019.03.12 INTEL NDTM US LLC
  • US10229057B2 patent drawing
  • US10229057B2 patent drawing
  • US10229057B2 patent drawing

AI summary

In one embodiment, an apparatus comprises a storage device comprising a NAND flash memory device comprising a plurality of NAND flash memory units. The storage device is to determine that the NAND flash memory device did not pass an initialization procedure; identify a first addressing scheme that is implemented by one or more of the NAND flash memory units that initialized properly; and after the initialization procedure, instruct each of the plurality of NAND flash memory units to implement the first addressing scheme.