NAND Flash Block Copy via Segmented Bit Line Switching
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Solution Overview
Problem
Existing NAND FLASH memory devices with Shielded Bit Line (SBL) architecture face limitations in block copy performance due to sequential access of bit lines, resulting in slower page program and read times compared to All Bit Line (ABL) architecture.
Innovation Solution
Implementing multiple memory portions with a switching device between them and using multiple dynamic data caches (DDCs) to operate each portion independently, allowing concurrent data input/output and programming operations, which reduces bit line length and associated charging times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If Shielded Bit Line (SBL) architecture is used, then device complexity is reduced, but block copy performance and page program/read times deteriorate
Solution Approach 1:
The memory device is divided into multiple memory portions (first portion and second portion) that can be independently accessed. This segmentation allows concurrent operations on different portions, improving block copy performance without requiring the more complex ABL architecture across the entire device.
Solution Approach 2:
A switching device is introduced as an intermediary between memory portions to enable selective coupling and uncoupling of bit lines. This mediator allows the system to achieve ABL-like performance by dynamically configuring bit line connectivity while maintaining the simpler SBL architecture foundation.
2Device complexity
If sequential access of bit lines is used, then device complexity is reduced, but page program and read times increase
Solution Approach 1:
The patent enables continuous useful action by allowing concurrent page program and read operations across different memory portions. While one portion is being read, another portion can be programmed simultaneously, eliminating idle time and reducing overall operation duration.
Solution Approach 2:
The switching device provides dynamic reconfiguration of bit line connectivity, allowing the system to adapt between sequential and concurrent access modes based on operational requirements. This dynamic capability enables faster page program and read times by switching to concurrent access when beneficial.
3Productivity
If multiple memory portions with switching devices are implemented, then block copy performance is improved, but device complexity increases
Solution Approach 1:
The memory device is divided into multiple memory portions (first portion and second portion) that can be independently accessed. This segmentation allows concurrent operations on different portions, improving block copy performance without requiring the more complex ABL architecture across the entire device.
Solution Approach 2:
The switching device serves multiple functions: it couples bit lines between memory portions during block copy operations, isolates portions during concurrent operations, and enables flexible configuration for different access patterns. This multi-functionality justifies the added complexity by providing versatile operational capabilities.
4Speed
If data lines are continuously coupled between memory portions, then data transfer speed is maintained, but power consumption increases
Solution Approach 1:
The switching device provides dynamic reconfiguration of bit line connectivity, allowing the system to adapt between sequential and concurrent access modes based on operational requirements. This dynamic capability enables faster page program and read times by switching to concurrent access when beneficial.
Solution Approach 2:
The switching device preemptively uncouples data lines between memory portions when concurrent operations are initiated, preventing unnecessary charge accumulation and power consumption. This preliminary action eliminates harmful effects before they occur by isolating portions that don't need to communicate.
Data Source
AI summary
Methods and apparatuses for an enhanced block copy. One embodiment is reading data from a source block located in a first portion of the memory device, and programming the data to a target block located in a second portion of the memory device. The first and second portions are communicatively coupled by data lines extending across the portions. The data lines are communicatively uncoupled between the first and second portions for at least one of the reading and programming acts.


