NAND Flash String Writes Using Divisional 1-2-4-8 Coding

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Solution Overview

Problem

NAND flash memory systems face challenges in maintaining data reliability due to initial drop and parasitic capacitance effects during write operations, leading to deviations in threshold voltage distributions and reduced data integrity.

Innovation Solution

The implementation of a 1-2-4-8 code data assignment and divisional write operations, where 4-page data is written in two separate write operations, with the first write operation focusing on lower and middle bits and the second on upper bits, while also using internal data load (IDL) to restore and correct data, thereby minimizing the impact of initial drop and parasitic capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If data is written in a single write operation, then write speed is improved, but data reliability deteriorates due to initial drop and parasitic capacitance effects

Engineering Contradiction:
Improvewrite speedVSAvoiddata reliability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent divides a single write operation into multiple sequential write operations (first write operation and second write operation). The first write operation writes data to memory cells while the second write operation writes remaining data after a predetermined time has elapsed. This segmentation allows the system to mitigate initial drop and parasitic capacitance effects by spacing out the write operations, thereby improving data reliability while maintaining acceptable write speed through efficient parallel processing of multiple strings.

Inventive Principle:
Principle #1Segmentation

2Reliability

If more RAM is used in the controller, then data restoration and correction capability is improved, but device complexity and cost increase

Engineering Contradiction:
Improvedata restoration capabilityVSAvoidcontroller complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements an internal data load (IDL) function that enables the controller to automatically restore and correct data using its existing resources. The IDL function utilizes the controller's internal buffer memory to store and restore data patterns, allowing the system to perform self-correction of data errors without requiring additional external RAM. This self-service mechanism improves data restoration capability while avoiding increased device complexity and cost.

Inventive Principle:
Principle #25Self-service

3Manufacturing precision

If divisional write operations are implemented, then data accuracy is improved, but write time increases

Engineering Contradiction:
Improvedata accuracyVSAvoidwrite time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent combines multiple write operations by dividing data into multiple strings that can be written in parallel. The controller divides the data to be written across multiple strings, allowing simultaneous write operations to different memory blocks. This merging approach maintains data accuracy through controlled sequential writes while reducing total write time through parallel processing capability, effectively resolving the time-accuracy tradeoff.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12198755B2Nonvolatile semiconductor memory device that includes a plurality of strings
Publication Date: 2025.01.14 KIOXIA CORP
  • US12198755B2 patent drawing
  • US12198755B2 patent drawing
  • US12198755B2 patent drawing

AI summary

According to one embodiment, a semiconductor storage device includes a first memory cell capable of storing n-bit data (n is a natural number not less than 4). When receiving first data, including first and second bits of the n-bit data, from a controller, the semiconductor storage device writes the received first data to the first memory cell. After receiving the first data, when the semiconductor storage device receives second data including third and fourth bits of the n-bit data, the semiconductor storage device reads the first and second bits from the first memory cell and writes the n-bit data to the first memory cell based on the read first and second bits and the received second data.