NAND Flash Memory Page Segmentation for Data Reliability

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Solution Overview

Problem

Multi-level cell flash memories suffer from low data transfer rates and data corruption/data loss issues, necessitating a method to enhance data retention reliability.

Innovation Solution

A data storing method for NAND flash memory that identifies and writes data into 'strong' pages within memory blocks, avoiding 'weak' pages to ensure data integrity and reliability, by dividing data into page data and sequentially writing it into corresponding strong pages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multi-level cell flash memory is used to increase storage density, then storage capacity is improved, but data reliability deteriorates due to data corruption and data loss

Engineering Contradiction:
Improvestorage capacityVSAvoiddata reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent divides memory pages into strong pages and weak pages based on their individual reliability characteristics. Strong pages have higher reliability and are used to store critical data, while weak pages are used for less critical data. This local differentiation of quality allows the system to maintain high storage density while improving overall data reliability by strategically placing data in the most reliable locations.

Inventive Principle:
Principle #3Local quality

2Quantity of substance

If multi-level cell flash memory is used to increase storage density, then storage capacity is improved, but data transfer rate deteriorates

Engineering Contradiction:
Improvestorage capacityVSAvoiddata transfer rate
Core Design Contradiction:
Quantity of substanceVSSpeed

Solution Approach 1:

The patent segments the memory block into multiple pages with different reliability characteristics (strong and weak pages). By organizing data storage in this segmented manner, the system can optimize data transfer operations by accessing strong pages for high-speed reads while maintaining the ability to store data across multiple pages for high density. The segmentation allows parallel operations and reduces transfer bottlenecks.

Inventive Principle:
Principle #1Segmentation

3Quantity of substance

If data is written into weak pages to maximize storage utilization, then storage capacity is improved, but data corruption risk increases

Engineering Contradiction:
Improvestorage utilizationVSAvoiddata corruption risk
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent implements beforehand cushioning by pre-identifying and designating strong pages as the primary storage locations for data. Strong pages are positioned to withstand environmental factors and wear better than weak pages. By cushioning the data storage strategy in advance by relying on strong pages, the system prevents data corruption before it occurs, while still maintaining high storage utilization through the coordinated use of both strong and weak pages.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS8065468B2Data storing methods and apparatus thereof
Publication Date: 2011.11.22 SILICON MOTION INC
  • US8065468B2 patent drawing
  • US8065468B2 patent drawing
  • US8065468B2 patent drawing

AI summary

A data storing method for non-volatile memory is provided, wherein the non-volatile memory includes at least one memory block having a plurality of strong pages and weak pages. A logic block writing command is received for storing the corresponding writing data into the memory block. It is then determined whether the writing data is larger than one page. The writing data is divided into a plurality of page data according to the memory size of the page when the writing data is larger than one page. Next, a first storing page for each page data is determined according to a starting writing page according to the logic block writing command. And, the page data are sequentially written into the first storing pages. Note that each first storing page is a strong page within the memory block.