NAND Memory Thermal Throttling with Stress-Corrected Temperature Sensing
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Solution Overview
Problem
High-density packaging of NAND memory leads to increased heat generation and temperature, necessitating precise temperature control to prevent failure and ensure safety, while existing thermal throttling methods may be inadequate due to stress-induced temperature sensor inaccuracies.
Innovation Solution
Incorporation of a stress sensor and correction tables to accurately measure and correct temperature readings, allowing for precise thermal throttling based on true temperature values, independent of stress, and adjusting current and voltage settings to manage heat effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high-density packaging of NAND memory is implemented, then storage capacity increases, but heat generation increases and temperature control becomes difficult
Solution Approach 1:
The patent implements a feedback mechanism by continuously monitoring temperature through a temperature sensor and adjusting the access control to the NAND memory based on the monitored temperature. When temperature reaches a threshold, the system reduces access frequency or intensity, creating a closed-loop thermal management system that dynamically balances storage utilization with thermal control.
2Temperature
If thermal throttling is implemented to control temperature, then temperature increase is prevented, but measurement precision of temperature sensor deteriorates due to stress
Solution Approach 1:
The patent introduces a stress sensor as an intermediary element that detects stress applied to the temperature sensor. By measuring stress independently, the system can compensate for its effect on temperature measurements, effectively separating the measurement of thermal conditions from mechanical stress effects and restoring measurement accuracy.
Solution Approach 2:
The patent compensates for temperature sensor inaccuracies by detecting stress levels and applying correction factors based on the relationship between stress and temperature measurement errors. This involves changing the measurement parameters from raw temperature readings to corrected temperature values that account for stress-induced deviations.
3Measurement precision
If stress sensor and correction mechanisms are added, then temperature measurement accuracy improves, but device complexity increases
Solution Approach 1:
The patent merges the temperature sensor and stress sensor into an integrated sensing system within the memory device. By combining multiple sensing functions into a unified architecture with shared signal processing and control logic, the system achieves accurate temperature measurement under stress without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate temperature control and extended lifespan of NAND memory by preventing overheating through precise thermal management, even under high stress conditions.
Implementation Method 1
a temperature sensor configured to output first temperature data about a temperature of the memory chip
Implementation Method 2
a stress sensor configured to output first stress data about a stress applied to the memory chip
Implementation Method 3
a correction circuit configured to generate second temperature data about the temperature of the memory chip by correcting the first temperature data based on the first stress data
Data Source
AI summary
According to one embodiment, there is provided a memory chip comprising: a memory cell array; a temperature sensor configured to output first temperature data about a temperature of the memory chip; a stress sensor configured to output first stress data about a stress applied to the memory chip; a correction circuit configured to generate second temperature data about the temperature of the memory chip by correcting the first temperature data based on the first stress data; and an interface through which the second temperature data can be output to outside the memory chip.