3D NAND Pad Tier Layout for Logic-Region Die Area Reduction

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Solution Overview

Problem

Conventional bond pad configurations in non-volatile memory devices, such as 3D NAND Flash memory devices, hinder performance improvements and reduce feature size reductions due to their design limitations.

Innovation Solution

The proposed solution involves a microelectronic device design with a conductive pad tier configuration, where first conductive pads are positioned outside the logic region and second conductive pads are placed within the logic region, allowing for improved electrical connectivity and reduced size without compromising performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional bond pad configurations are used, then manufacturing simplicity is maintained, but device performance is hampered and feature size reduction is impeded

Engineering Contradiction:
Improvedevice performanceVSAvoidpad structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The pad structure is segmented into multiple functional layers: a first conductive pad layer for electrical connection, a second conductive pad layer for additional connectivity, and an insulative material layer for isolation. This segmentation allows each layer to perform its specific function optimally, improving device performance while maintaining manufacturing feasibility through standardized multi-layer fabrication processes

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from conventional two-dimensional planar bond pads to a three-dimensional multi-layer pad structure. By stacking conductive pad layers vertically and using insulative materials to separate them, the design utilizes the vertical dimension to increase connectivity options and improve electrical performance without consuming additional horizontal die area, thereby enabling feature size reduction

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If bond pad size is reduced to increase packaging density, then packaging density improves, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedie area utilizationVSAvoidpad alignment precision
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The multi-layer pad structure segments the electrical connection function across multiple layers, allowing each individual pad layer to be smaller while collectively providing sufficient connectivity. The insulative material layers provide clear boundaries and isolation, making it easier to align smaller pad features with precise manufacturing tolerances

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulative material layers act as intermediaries between the conductive pad layers, providing physical separation and alignment references. These insulative layers can be used as etch stop layers or alignment markers during fabrication, reducing the precision requirements for aligning the smaller conductive pad features across multiple layers

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250098159A1Memory devices including pad structures
Publication Date: 2025.03.20 MICRON TECHNOLOGY INC
  • US20250098159A1 patent drawing
  • US20250098159A1 patent drawing
  • US20250098159A1 patent drawing

AI summary

A microelectronic device comprises a base structure, a memory array overlying the base structure, and a conductive pad tier overlying the memory array. The base structure comprises a logic region including logic devices. The memory array comprises vertically extending strings of memory cells within a horizontal area of the logic region of the base structure. The conductive pad tier comprises first conductive pads substantially outside of the horizontal area of the logic region of the base structure, and second conductive pads horizontally neighboring the first conductive pads and within the horizontal area of the logic region of the base structure. Memory devices and electronic systems are also described.