NAND Memory Partial Superblock Bad Block Threshold

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Solution Overview

Problem

Traditional superblocks in NAND memory devices are affected by bad blocks, leading to reduced performance and increased costs due to the need for redundant blocks or planes. Partial superblocks can mitigate this, but they result in decreased performance that may be perceptible to users.

Innovation Solution

The solution involves reallocating good blocks within a plane to replace bad blocks, forming partial superblocks with a quantity of bad blocks that satisfies a bad block threshold. This approach increases the number of partial superblocks, allowing their use while limiting performance decreases to non-perceptible levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional superblocks are used in NAND memory devices, then reliability is improved through redundant blocks, but device complexity and cost increase

Engineering Contradiction:
ImprovereliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the parameter of superblock composition by allowing partial superblocks with a controlled number of bad blocks (threshold T), rather than requiring complete superblocks with zero bad blocks. This parameter change enables using previously discarded partial superblocks while maintaining reliability through the threshold-based acceptance criterion.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent treats bad blocks as acceptable imperfections that can be tolerated up to a certain threshold, rather than requiring perfect blocks. This approach uses less reliable but cheaper-to-manufacture memory blocks, reducing the need for extensive redundancy and lowering overall device complexity and cost.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

2Ease of manufacture

If partial superblocks are used to mitigate bad block effects, then manufacturing yield is improved, but performance decreases to perceptible levels

Engineering Contradiction:
Improvemanufacturing yieldVSAvoidperformance
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The patent introduces a threshold parameter T that limits the number of bad blocks in a superblock. By controlling this parameter, the system accepts partial superblocks with some bad blocks (improving manufacturing yield) while ensuring the performance degradation remains below perceptible levels through the threshold constraint.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements a feedback mechanism where the number of bad blocks in each superblock is counted and compared against the threshold T. Superblocks exceeding the threshold are rejected or flagged, providing feedback control that ensures performance remains acceptable while maximizing the use of partially good blocks from manufacturing.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12333181B2Source address memory managment
Publication Date: 2025.06.17 MICRON TECHNOLOGY INC
  • US12333181B2 patent drawing
  • US12333181B2 patent drawing
  • US12333181B2 patent drawing

AI summary

Methods, systems, and apparatuses related to source address memory management are described. For example, a controller can be coupled to a memory device to select a source block, a destination block, and a metadata block. The controller can store metadata indicative of an address of the source block in the metadata block. The controller can perform a memory management operation to transfer data from the source block to the destination block.