3D NAND Pillar Architecture with Inset Plugs for Stack Anchoring

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Solution Overview

Problem

The challenge in 3D NAND Flash storage devices is the 'lifting' of semiconductor pillars during manufacturing, which occurs as the vertical height increases, leading to defects and a weakened connection between the stack and the substrate, resulting in defective wafers.

Innovation Solution

The introduction of 'dummy' pillars etched deep into the silicon base substrate, combined with active channel pillars, and partially inset tungsten plugs to enhance skin friction and distribute load, preventing the stack from lifting off the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the vertical height of semiconductor pillars is increased to increase memory density, then the memory capacity is improved, but the stack lifts off the underlying substrate causing manufacturing defects

Engineering Contradiction:
Improvememory densityVSAvoidstack connection integrity
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The invention divides the semiconductor structure into multiple functional segments: active pillars for memory storage, dummy pillars for mechanical support, and inset plugs for anchoring. This segmentation allows each component to serve its specific purpose - active pillars maintain memory capacity while dummy pillars prevent stack lifting, resolving the contradiction between density and reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention introduces dummy pillars as intermediary elements that mediate between the stack and substrate. These dummy pillars act as mechanical mediators that transfer and distribute stress, preventing the stack from lifting off the substrate while allowing active pillars to maintain their memory function.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If conventional vertical memory array architectures are used to increase density, then more memory cells fit in unit area, but manufacturing defects increase due to stack lifting

Engineering Contradiction:
Improvememory cells per unit areaVSAvoidstack alignment accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention performs preliminary action by forming dummy pillars and inset plugs before completing the stack formation. This preliminary structural preparation ensures that when the full stack is built, the mechanical support is already in place to prevent lifting, thereby maintaining manufacturing precision throughout the process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention creates a composite structural system combining active pillars (for memory function), dummy pillars (for mechanical support), and inset plugs (for anchoring). This composite approach integrates multiple material functions into a unified structure that simultaneously achieves high density and manufacturing precision.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution strengthens the connection between the stack and the substrate, reducing defects and maintaining the integrity of the semiconductor pillars, thereby improving the reliability and density of 3D NAND Flash storage devices.

Implementation Method 1

partially inset tungsten plugs to enhance skin friction and distribute load

Methodology Applied
Scientific EffectSkin friction: Friction

Data Source

PatentUS11862573B2NAND flash block architecture enhancement to prevent block lifting
Publication Date: 2024.01.02 MICRON TECHNOLOGY INC
  • US11862573B2 patent drawing
  • US11862573B2 patent drawing
  • US11862573B2 patent drawing

AI summary

Disclosed is a three-dimensional memory device. In one embodiment, a device is disclosed comprising a source plate; plugs fabricated fabricated on or partially formed in the source plate; a stack formed on the substrate and plugs comprising alternating insulating layers and conductive layers and channel-material strings of memory cells extending through the insulating layers and conductive layers; a first set of pillars extending through the stack formed by a process including etching the alternating insulating layers and conductive layers and depositing a pillar material therein, wherein each pillar in the first set of pillars terminates atop a respective plug in the plurality of plugs; and a second set of pillars extending through the stack formed by a process including etching the alternating insulating layers and conductive layers and depositing a pillar material therein, wherein each pillar in the second set of pillars terminates in the source plate.