NAND Wordline Pre-Charging for Faster Memory Setup
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Solution Overview
Problem
As the number of stacked word lines increases in memory devices, the capacitance and power consumption of word lines also increase, necessitating a faster word line setup time to improve read and verification operations.
Innovation Solution
Pre-charging the common source line during word line setup to reduce the number of activated charge pumps, thereby decreasing power consumption and shortening the word line setup time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked word lines increases, then the memory integration degree increases, but the capacitance and power consumption of word lines increase
Solution Approach 1:
The common source line is pre-charged to a first pass voltage before the read operation begins. This preliminary action reduces the voltage difference that needs to be overcome during word line setup, thereby reducing the power consumption and setup time when activating multiple stacked word lines
2Quantity of substance
If the number of stacked word lines increases, then the memory integration degree increases, but the word line setup time increases
Solution Approach 1:
The common source line is pre-charged to a first pass voltage before the read operation begins. This preliminary action reduces the voltage difference that needs to be overcome during word line setup, thereby reducing the setup time when activating multiple stacked word lines
Solution Approach 2:
The voltage on the common source line is dynamically adjusted during the read operation. It is pre-charged to a first pass voltage during setup, then increased to a second pass voltage during the read operation, optimizing both setup time and read performance
3Speed
If more charge pumps are activated to reduce word line setup time, then the word line setup time decreases, but the power consumption increases
Solution Approach 1:
The common source line is pre-charged to a first pass voltage before the read operation begins. This preliminary action reduces the voltage difference that needs to be overcome during word line setup, thereby reducing the power consumption and setup time when activating multiple stacked word lines
Solution Approach 2:
The voltage on the common source line is dynamically adjusted during the read operation. It is pre-charged to a first pass voltage during setup, then increased to a second pass voltage during the read operation, optimizing both setup time and read performance
Data Source
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AI summary
A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality of word lines by applying a pre-charge voltage to the common source line at a second time point during the word line setup period, applying an off-voltage to the unselected ground select line at a third time point during the word line setup period, and applying a ground voltage to the common source line at a fourth time point during the word line setup period.