Nano-device Patterning via Self-Assembly Masking

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Solution Overview

Problem

Conventional methods for miniaturizing semiconductor devices face challenges in reducing feature size and improving performance due to limitations in exposure technologies and complexity in manufacturing processes, particularly in controlling nanostructure shape and position, which increases costs and complicates the manufacturing process.

Innovation Solution

A method for forming nano-devices using self-assembly materials like DNA molecules, proteins, and carbon-based materials, where a mask layer is formed without a light source, enabling nano-scale precision control through etching or ion implantation processes, reducing manufacturing processes and costs, and improving integration density.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional exposure processes are used to form patterns on photoresist, then manufacturing processes are simplified, but minimum feature-size cannot be reduced due to wavelength limitation of light source

Engineering Contradiction:
Improveminimum feature-sizeVSAvoidexposure process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs self-assembly materials that automatically organize into periodic nanostructures without requiring external exposure processes. The materials spontaneously form patterns at the nanoscale through their inherent self-assembly properties, eliminating the need for complex light source systems and exposure equipment while achieving minimum feature-sizes below conventional optical limits.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent replaces the optical exposure system with a self-assembly mechanism. Instead of using light sources and photoresist chemistry, the system uses materials that naturally assemble into periodic structures through physical or chemical self-organization, substituting a complex optical-mechanical system with a simpler self-organizing material system.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If next-generation exposure technologies using short wavelength or e-beam are used, then minimum feature-size can be reduced, but manufacturing process becomes complicated and manufacturing cost increases

Engineering Contradiction:
Improveminimum feature-sizeVSAvoidmanufacturing process simplicity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent uses self-assembly materials that automatically form periodic nanostructures without requiring complex next-generation exposure equipment. The self-assembly process occurs spontaneously under controlled conditions, eliminating the need for expensive short-wavelength light sources or e-beam systems while maintaining nanoscale precision.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent changes the fundamental parameter from external energy-driven patterning (light or electron beams) to internal material-driven self-organization. By utilizing materials with inherent self-assembly capabilities, the system achieves nanoscale feature sizes without requiring the extreme parameters (short wavelengths, high-energy beams) that complicate manufacturing.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If DNA molecules with self-assembly characteristics are used to form nano-structures, then minimum feature-size can be reduced, but control of shape and position becomes difficult

Engineering Contradiction:
Improveminimum feature-sizeVSAvoidshape and position control
Core Design Contradiction:
Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent applies local quality by using materials with spatially varying self-assembly properties. Different regions of the material system are designed to self-assemble into specific patterns at different locations, enabling precise control over the shape and position of nanostructures while maintaining the benefits of self-assembly for achieving small feature sizes.

Inventive Principle:
Principle #3Local quality

4Ease of manufacture

If mask layer is formed without using light source, then manufacturing cost is reduced, but nano-scale precision control must be achieved through alternative methods

Engineering Contradiction:
Improvemanufacturing costVSAvoidnano-scale precision control
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent achieves nanoscale precision control without light sources by using self-assembly materials that automatically organize into periodic structures with precise dimensional control. The self-assembly process inherently provides the necessary precision through the molecular or nanoscale organization of the material, eliminating expensive exposure equipment while maintaining manufacturing precision.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise nano-scale patterning and ion implantation without exposure processes, simplifying the manufacturing process, reducing costs, and enhancing integration density and device yield.

Implementation Method 1

forming a periodic nanostructure using a self-assembly material layer

Methodology Applied
Scientific EffectSelf-assembly: Self-Assembly

Implementation Method 2

performing an ion implantation process on the substrate using the mask layer as an ion implantation mask

Methodology Applied
Scientific EffectIon implantation: Ion Implantation

Implementation Method 3

performing an etching process on the substrate using the mask layer as an etching mask

Methodology Applied
Scientific EffectEtching:

Data Source

PatentUS7977177B2Methods of forming nano-devices using nanostructures having self-assembly characteristics
Publication Date: 2011.07.12 SUNGKYUNKWAN UNIV FOUND FOR COLLABORATION SUNGKYUNKWAN UNIV
  • US7977177B2 patent drawing
  • US7977177B2 patent drawing
  • US7977177B2 patent drawing

AI summary

Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.