Nano-heterostructure Light Detector with Schottky Junction
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Solution Overview
Problem
Conventional methods for creating two-dimensional semiconductor materials result in large heterogeneous structures, limiting their applications due to size constraints.
Innovation Solution
A nano-heterostructure is formed by sandwiching a semiconductor layer between two carbon nanotubes, creating a Wan der Waals heterostructure with a Schottky junction, which allows for a nanoscale three-layered stereoscopic structure with lower energy consumption and higher spatial resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to create two-dimensional semiconductor materials, then the materials can be obtained, but the heterogeneous structures formed are large in size, limiting applications
Solution Approach 1:
The patent segments the heterogeneous structure into distinct layers: a two-dimensional semiconductor material layer and a three-dimensional material layer, with their interface forming a controlled heterojunction. This segmentation allows precise control over the size and dimensions of each component, enabling nanoscale structures that overcome the size limitations of conventional methods.
Solution Approach 2:
The patent applies local quality by creating a specific heterojunction interface where the two-dimensional semiconductor material contacts the three-dimensional material. This localized interface region has distinct properties from the bulk materials, enabling precise control over electrical and optical characteristics at the nanoscale, thus improving manufacturing precision while expanding application versatility.
2Ease of manufacture
If larger heterogeneous structures are used, then manufacturing is easier, but the spatial resolution and application performance are limited
Solution Approach 1:
The patent replaces conventional mechanical fabrication methods with a layer-by-layer deposition approach, where two-dimensional semiconductor material is deposited to form a thin layer, followed by formation of a three-dimensional material layer. This substitution enables precise control over layer thickness and interface quality, achieving nanoscale spatial resolution while maintaining ease of manufacture through simplified processing steps.
3Measurement precision
If nanoscale structures are created, then spatial resolution and integrity are improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs composite materials by combining two-dimensional semiconductor material with three-dimensional material to form a heterojunction structure. This composite approach achieves nanoscale spatial resolution and high structural integrity while managing complexity through the complementary properties of the combined materials, where the two-dimensional layer provides atomic-level precision and the three-dimensional layer provides structural stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nano-heterostructure enables efficient current transmission and higher integrity, facilitating the development of nanoscale devices such as transistors and light detectors with improved performance.
Implementation Method 1
obtain a nanoscale heterostructure with a Schottky junction
Data Source
AI summary
The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.