Nano-object Connection Device with Doped Zone Segmentation

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Solution Overview

Problem

Existing methods for connecting nano-objects to external electrical systems face challenges in creating doped zones that result in surface damage and imprecise spacing, leading to degraded electrical contacts.

Innovation Solution

The method involves forming thinner second doped zones between thicker first doped zones, with thermal annealing to reduce surface roughness and facilitate precise control over spacing, and using ion implantations from both the front and back faces to minimize damage and extend the implanted zone thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If doped zones are made large to ensure good electrical contact, then electrical contact quality improves, but control over spacing between doped zones becomes difficult

Engineering Contradiction:

Improveelectrical contact qualityVSAvoidspacing control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent divides the doped zone structure into two distinct types: first doped zones (thicker, for electrical contact) and second doped zones (thinner, for precise spacing and nano-object placement). This segmentation allows each zone to optimize its function independently, resolving the contradiction between contact quality and spacing precision.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor layer are given different doping characteristics - the first doped zones have greater thickness for electrical contact, while the second doped zones have lesser thickness for precise positioning. This local differentiation enables simultaneous optimization of both electrical contact and spacing control.

Inventive Principle:

Principle #3Local quality

2Reliability

If dopants are implanted in the surface layer to create doped zones, then electrical conductivity improves, but surface damage occurs degrading electrical contact

Engineering Contradiction:

Improveelectrical conductivityVSAvoidsurface damage

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent performs thermal annealing before nano-object placement to repair surface damage caused by ion implantation. This preliminary action restores the semiconductor surface quality, eliminating the harmful effects of implantation damage while preserving the electrical conductivity benefits of doping.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The ion implantation process, which initially causes surface damage, is followed by thermal annealing that converts this damage into an opportunity for controlled dopant activation and surface reconstruction. The harmful implantation damage becomes a beneficial process step when properly managed through annealing.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Productivity

If ion implantation is used to form doped zones, then doping efficiency improves, but surface roughness increases reducing electrical contact quality

Engineering Contradiction:

Improvedoping efficiencyVSAvoidsurface roughness

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The surface roughness caused by ion implantation is converted into a beneficial process state through thermal annealing, which reconstructs the surface and reduces roughness while maintaining the dopant distribution benefits.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

Thermal annealing acts as an intermediary process between ion implantation and nano-object placement. It mediates the conflicting effects by repairing surface damage and reducing roughness while preserving the electrical conductivity improvements from doping.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the electrical contact quality and precision of nano-object placement, reducing surface damage and allowing for better control over the spacing between doped zones, enhancing the connection of nano-objects to external electrical systems.

Implementation Method 1

at least one implantation of the surface layer using an ion beam penetrating through a first face of the semiconducting layer

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

Such an annealing can activate the dopants in the first doped zones and the second doped zones and modify the surface condition of the doped zones

Methodology Applied

Scientific EffectThermal annealing: Annealing

Implementation Method 3

the dopant concentration in these second doped zones is limited to the near surface (of the order of a few nanometres) which facilitates control over the diffusion of dopants

Methodology Applied

Scientific EffectDiffusion: Diffusion

Data Source

PatentUS10204786B2Device for connecting at least one nano-object and method of manufacturing it

Publication Date: 2019.02.12 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

AI summary

Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer in which the first doped zones are formed at a spacing from each other, an external electrical system being connectable to the first doped zones, each first doped zone (8a, 8b) being in contact with a second doped zone on which a portion of the nano-object is located, the second doped zones being separated from each other and with a thickness less than the thickness of the first doped zones.