Nano Resonator Fabrication via Laser Interference Lithography
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Solution Overview
Problem
Conventional RF NEMS technologies require a mask to generate nano-sized line patterns for fabricating nano resonators, limiting the development of mask-free methods for nano-scale device fabrication.
Innovation Solution
A method and apparatus using laser interference lithography to form and transfer nano line patterns from a first substrate to a second substrate with a gate electrode, enabling the formation of source and drain electrodes without a mask, facilitating the creation of a nano resonator capable of vibrating under a magnetic field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If electron beam lithography with a mask is used to fabricate nano-scale devices, then manufacturing precision is improved, but device complexity and fabrication difficulty increase due to the requirement of masks
Solution Approach 1:
The patent extracts and eliminates the mask component from the lithography system. By using direct laser interference lithography, the method generates nano line patterns without requiring physical masks, thereby simplifying the fabrication process while maintaining manufacturing precision.
Solution Approach 2:
The patent replaces the mechanical mask-based electron beam lithography system with an optical laser interference lithography system. This substitution eliminates the need for physical masks and their associated handling complexities while achieving the desired nano-scale pattern precision.
2Manufacturing precision
If conventional RF NEMS technology with masks is used, then nano line patterns can be generated, but the fabrication process becomes more complex and time-consuming
Solution Approach 1:
The patent performs preliminary pattern formation directly on the substrate using laser interference lithography, eliminating the need for separate mask preparation and alignment steps. This preliminary action integrates multiple fabrication steps into one, reducing overall fabrication time while maintaining pattern precision.
Solution Approach 2:
The patent merges the pattern generation and substrate processing steps into a single integrated process. By combining laser interference lithography with direct substrate patterning, the method eliminates sequential mask-based steps, thereby reducing fabrication time while achieving precise nano line patterns.
3Speed
If mask-based lithography is used for nano resonator fabrication, then operating frequency can be increased through scale reduction, but fabrication complexity increases
Solution Approach 1:
The patent extracts the mask requirement from the fabrication process, enabling scale reduction and frequency increase without the complicating factor of mask fabrication and handling. This allows direct patterning at smaller scales needed for higher frequency operation.
Solution Approach 2:
The patent changes the fundamental parameter of pattern generation from mechanical mask-based electron beam lithography to optical laser interference lithography. This parameter change enables more flexible scaling to achieve higher operating frequencies while simplifying the overall fabrication process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the fabrication of nano resonators with increased operating frequencies and reduced fabrication complexity by eliminating the need for masks, allowing for a wider range of frequency usage in nano-scale devices.
Implementation Method 1
a line pattern forming unit configured to form a line pattern in a first substrate
Implementation Method 2
exposing a photoresist layer formed on a first substrate to a laser to form a nano line pattern array
Implementation Method 3
transferring the line pattern to a second substrate including a gate electrode
Data Source
AI summary
A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.