Nano-Carbon Coated Resist Patterns for Double Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional double patterning techniques in semiconductor fabrication result in pattern defects due to thickness reduction and composition changes in the second resist film, leading to defective patterns and decreased productivity and yield.
Innovation Solution
Attaching a nano-carbon material to the surface of the first resist pattern increases its rigidity, preventing chemical mixing and physical stress issues during the formation of the second resist film, thereby maintaining the desired shape of the first resist pattern and enhancing pattern resolution and depth of focus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a second resist film is formed on the first resist pattern in conventional double patterning, then the desired mask pattern is divided into two masks for light exposure, but the first resist pattern is dissolved in the solvent of the second resist film, causing thickness reduction and pattern defects
Solution Approach 1:
A solvent-resistant coating layer is applied to the first resist pattern to act as an intermediary barrier between the first resist pattern and the solvent in the second resist film. This coating prevents the solvent from dissolving the first resist pattern, thereby maintaining its thickness and composition while allowing the second resist film to be formed successfully.
2Ease of manufacture
If the first resist pattern is used as a mandrel for forming the second resist film, then the process is simplified, but the composition of the second resist pattern changes by mixing with the first resist pattern, forming defective patterns
Solution Approach 1:
The solvent-resistant coating serves as a mediator that allows the second resist film to be formed on the first resist pattern without direct chemical interaction. This prevents mixing between the two resist patterns while maintaining the simplified mandrel-based process architecture.
Solution Approach 2:
The solvent-resistant coating is applied locally only to the first resist pattern areas that will serve as mandrels, providing targeted protection where needed while leaving other areas unaffected. This localized treatment maintains process simplicity while preventing composition mixing at critical interfaces.
3Manufacturing precision
If conventional double patterning is used to miniaturize patterns, then the process constant k1 is reduced to enhance resolution, but pattern defects occur due to chemical mixing and physical stress, decreasing productivity and yield
Solution Approach 1:
The solvent-resistant coating prevents chemical mixing between resist patterns, eliminating a major source of pattern defects. This enables conventional double patterning to achieve its intended resolution enhancement without the yield-penalizing defects caused by chemical contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces pattern defects, allowing for the formation of finer patterns with desired shapes, improving the productivity and yield in semiconductor device fabrication processes.
Implementation Method 1
attaching a nano-carbon material to the surface of the first resist pattern
Data Source
AI summary
A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.