Nanocarbon N-Type Semiconductor Elements with Oxygen-Barrier Insulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing n-type semiconductor elements using carbon nanotubes (CNTs) suffer from degradation of semiconductor characteristics under atmospheric conditions, leading to instability and increased process complexity in maintaining low oxygen permeability.
Innovation Solution
A semiconductor element structure comprising a substrate, source and drain electrodes, a gate electrode, a semiconductor layer of nanocarbon, and a second insulating layer containing a compound with a carbon-carbon double bond or conjugated system and a polymer, which enhances n-type semiconductor characteristics and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a layer containing an organic compound with carbon-nitrogen bonds is formed on CNTs to convert p-type characteristics to n-type, then n-type semiconductor characteristics are improved, but the characteristics are degraded by long-term storage under atmospheric conditions
Solution Approach 1:
The patent uses a composite material consisting of an organic compound with carbon-nitrogen bonds (such as polyaniline or polythiophene) combined with carbon nanotubes. This composite structure enables the conversion of p-type CNT-FETs to n-type while providing enhanced stability against atmospheric degradation through the synergistic interaction between the organic compound and CNTs.
Solution Approach 2:
The patent modifies the chemical and physical parameters of the semiconductor layer by introducing organic compounds with specific functional groups (carbon-nitrogen bonds) that alter the charge carrier type and concentration. This parameter change transforms the semiconductor characteristics from p-type to n-type while the organic compound provides protective effects against atmospheric exposure.
2Stability of the object's composition
If the layer structure is restricted to achieve low oxygen permeability, then stability is improved, but the number of processes increases
Solution Approach 1:
The organic compound layer serves multiple functions simultaneously: it converts the semiconductor type from p-type to n-type, provides protection against atmospheric oxygen, and acts as a gate insulating layer. This multi-functionality eliminates the need for separate protective layers, reducing the total number of manufacturing processes while maintaining low oxygen permeability.
Solution Approach 2:
The patent merges the protective function against oxygen with the n-type conversion function into a single integrated layer. By combining these functions in one layer rather than using separate layers, the device complexity is reduced while achieving both n-type characteristics and atmospheric stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure provides improved n-type semiconductor characteristics with enhanced stability and can be manufactured through a convenient process, suitable for wireless communication devices and merchandise tags.
Implementation Method 1
CHRISTIAN KLINKE ET AL: 'Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors' shows the conversion of p-type CNTFETs to n-type with improved device performance
Implementation Method 2
Patent Literature 2 discloses a method of preventing the degradation of the n-type semiconductor characteristics due to long-term storage under atmospheric conditions by lowering the oxygen permeability of the layer on CNTs
Data Source
Figure 1~2
Figure 3A(a)~3A(e)
Figure 3B(f)~4
AI summary
An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process. The n-type semiconductor element include; a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer; in which, the semiconductor layer contains nanocarbon, and the second insulating layer contains: A. (a) a compound having one carbon-carbon double bond or one conjugated system bound to at least one group represented by general formula (1) and at least one group represented by general formula (2); and (b) a polymer; or B. a polymer having, in its molecular structure, the remaining group after removing some hydrogen atoms from R1, R2, R3, or R4 in the compound (a), or the remaining group after removing some hydrogen atoms from the carbon-carbon double bond or the conjugated system in the compound (a).