Nanocolumn Light-Emitting Structure for Threading Dislocation Blocking
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Solution Overview
Problem
Existing crystal growth methods for forming light-emitting layers with nanocolumns in light emitting apparatuses are unable to sufficiently prevent the propagation of threading dislocations, leading to a decrease in light emission efficiency due to irregularities with height differences greater than or equal to 30 nm.
Innovation Solution
A light emitting apparatus is designed with a first semiconductor monocrystal layer, a second layer having a non-continuous crystal orientation, and a columnar crystal structure including a light emitting layer, where the second layer is formed using crystal growth within a mask layer with through holes and defect dislocation prevention layers that block threading dislocations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If irregularities are provided at the surface of the first nitride semiconductor layer to prevent threading dislocation propagation, then dislocation blocking is improved, but the height difference of irregularities becomes too large (greater than or equal to 30 nm) causing light emission efficiency to decrease
Solution Approach 1:
The invention changes the parameter of irregularity height from >=30 nm to <30 nm (specifically 1-20 nm) to resolve the contradiction. This parameter optimization allows the irregularities to effectively block threading dislocations while maintaining sufficient light emission efficiency, as the reduced height prevents excessive light scattering and absorption.
Solution Approach 2:
The invention applies local quality by creating specific irregularities only in certain regions of the first nitride semiconductor layer surface. The irregularities are localized at the interface region where threading dislocation blocking is most needed, while maintaining a relatively smooth surface in other areas to preserve light emission properties.
2Reliability
If a mask layer with through holes is used to form the second nitride semiconductor layer, then crystal orientation discontinuity is achieved to block dislocations, but the manufacturing process complexity increases
Solution Approach 1:
The invention segments the manufacturing process into distinct steps: forming the mask layer with through holes, forming the second nitride semiconductor layer in the through holes, and then removing the mask layer. This segmentation allows precise control over where the second layer forms, enabling crystal orientation discontinuity at specific locations to block threading dislocations while maintaining overall process feasibility.
Solution Approach 2:
The mask layer is formed in advance before the second nitride semiconductor layer. This preliminary action defines the precise locations where the second layer will grow, ensuring that crystal orientation discontinuity occurs exactly where needed to block threading dislocations, rather than attempting to create discontinuity after the fact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents the propagation of threading dislocations into the light emitting layers, enhancing light emission efficiency and maintaining desired light emission performance.
Implementation Method 1
a second layer provided at the first layer and having a crystal orientation not continuous with a crystal orientation of the first layer
Implementation Method 2
a columnar crystal structure including a light emitting layer and extending from the second layer
Data Source
AI summary
A light emitting apparatus according to the present disclosure includes a first layer made of a semiconductor monocrystal, a second layer provided at the first layer and having a crystal orientation not continuous with the crystal orientation of the first layer, and a columnar crystal structure including a light emitting layer and extending from the second layer.