Nanodevice Shape Control via Substrate Surface Energy Variation

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Solution Overview

Problem

Current methods struggle to form nanodevices with desired shapes and positions using two-dimensional nanomembers, limiting their application in various devices due to uncontrollable shapes and locations of nanotubes and nanowalls.

Innovation Solution

A method involving a substrate with varying surface energies and a mask layer to selectively grow nanotubes and nanowalls with controlled shapes and positions, using metal organic chemical vapor deposition (MOCVD) to form nanotubes with specific geometries and arrangements, such as triangular, rectangular, and circular shapes, and controlling intervals and diameters for enhanced device integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bottom-up process is used to form nanotubes and nanowalls, then crystalline structure and electrical properties are improved, but control of shape and position is deteriorated

Engineering Contradiction:
Improvecrystalline structure qualityVSAvoidshape and position control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

A mask layer is introduced as an intermediary between the substrate and the nanotube/nanowall formation process. The mask layer has specific patterns that guide and control the shape and position of nanotubes and nanowalls during bottom-up growth, while allowing the bottom-up process to maintain its crystalline structure quality advantages

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The mask layer creates local variations in surface energy and catalytic properties at different positions on the substrate. This allows selective growth of nanotubes and nanowalls with controlled shapes and positions while maintaining high crystalline quality through the bottom-up process in each local region

Inventive Principle:
Principle #3Local quality

2Area of moving object

If two-dimensional nanomembers are used, then surface area is increased, but manufacturing precision is deteriorated

Engineering Contradiction:
Improvesurface areaVSAvoidshape and position control
Core Design Contradiction:
Area of moving objectVSManufacturing precision

Solution Approach 1:

The mask layer serves as a mediator that enables precise control over the shape and position of two-dimensional nanomembers during their formation, allowing the benefits of large surface area to be realized while overcoming the manufacturing precision challenges

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The mask layer is prepared in advance with predetermined patterns before the nanotube and nanowall formation process. This preliminary action defines the desired shape and position of the two-dimensional nanomembers, enabling precise control over their final configuration

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of nanodevices with precise shape and position control, leading to improved performance in light emitting devices and bio sensors by maximizing current density and detection efficiency while minimizing power consumption and energy loss.

Implementation Method 1

A method involving a substrate with varying surface energies and a mask layer to selectively grow nanotubes and nanowalls with controlled shapes and positions

Methodology Applied
Scientific EffectSurface energy variation: Surface Tension

Implementation Method 2

using metal organic chemical vapor deposition (MOCVD) to form nanotubes with specific geometries and arrangements

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentEP2940733B1Nanodevice, transistor comprising the nanodevice, method for manufacturing the nanodevice, and method for manufacturing the transistor
Publication Date: 2020.10.28 LG DISPLAY CO LTD
  • EP2940733B1 patent drawingFigure 1
  • EP2940733B1 patent drawingFigure 2~3
  • EP2940733B1 patent drawingFigure 4~6

AI summary

A nanodevice comprising: a substrate (10); a mask layer (40) located on the substrate, the mask layer having at least one opening (402); and a nanowall (52) formed on the substrate through the opening, the nanowall extending through the opening in a direction substantially perpendicular to a surface of the substrate, wherein the substrate comprises a first substrate portion (301) contacting the nanowall; and a second substrate portion (303) surrounded by the first substrate portion, and wherein surface energy of the first substrate portion is larger than that of the second substrate portion, and a difference in the surface energy between the first and second substrate portions is about 0.1J/m2 to about 5J/m2.