NanoFET Nanosheet Ion Implantation for Lateral Junction Control
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, the integration density of electronic components increases, but this leads to challenges in reliably doping channel regions of nano-FETs, particularly in forming lateral channel junctions to reduce channel resistance and customize channel junction widths for each nanostructure.
Innovation Solution
A multi-step process involving recess and angled implantation of dopant ions into the ends of nanosheet channels under the transistor gate, allowing for controlled lateral implantation depth and straggling of channel junctions, thereby reducing channel resistance and enabling customized junction widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional doping methods are used to form lateral channel junctions, then channel resistance can be reduced, but manufacturing precision and control over junction width are insufficient for nanostructure dimensions
Solution Approach 1:
The patent transitions from conventional planar doping to three-dimensional angular ion implantation. By implanting dopant ions at angles (e.g., 30 degrees from normal) relative to the nanosheet surface, the process achieves precise lateral junction width control through geometric projection of the implantation depth, enabling manufacturing precision at the 5nm scale and below that cannot be achieved with vertical doping alone
Solution Approach 2:
The patent applies different doping conditions to different lateral positions of the nanosheet channel. By controlling the implantation angle and depth, the process creates localized doping regions with specific junction widths at each nanosheet, allowing customization of channel junction characteristics for each nanostructure while maintaining reliability through consistent process parameters
2Productivity
If feature size is reduced to increase integration density, then more components can be integrated, but doping control and junction formation become increasingly difficult
Solution Approach 1:
The patent changes the fundamental parameters of the doping process by introducing angular ion implantation geometry. By varying the implantation angle and energy parameters, the process achieves precise control over lateral junction depth and width even as overall feature sizes shrink to 5nm and below, enabling continued scaling while maintaining manufacturing precision through parameter optimization rather than relying solely on smaller dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process effectively reduces channel resistance and allows for customized channel junctions in nano-FETs, enhancing the performance and integration density of semiconductor devices by providing reliable lateral channel junctions and tunable lateral straggling for each nanostructure.
Implementation Method 1
A multi-step process involving recess and angled implantation of dopant ions into the ends of nanosheet channels under the transistor gate
Data Source
AI summary
A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.