Nanogap Memory Array With Tunnel Elements For Sneak Path Current Control

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The miniaturization of electric elements with nanogaps in memory arrays is hindered by sneak path currents, making it difficult to read, write, and delete data effectively, especially when transistors or diodes are used for separation, which complicates the process and limits miniaturization.

Innovation Solution

A memory element array is designed with switching elements having nanogaps connected in series through tunnel elements, which prevent sneak path currents by aligning and connecting them vertically via conductive protection films, simplifying data operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If switching elements with nanogaps are arranged in array for high-density memory, then integration density is improved, but sneak path currents are generated causing reading, writing, and deleting difficulties

Engineering Contradiction:

Improveintegration densityVSAvoiddata operation reliability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

A tunnel element is introduced as an intermediary component connected in series with each switching element. The tunnel element acts as a mediator that selectively blocks sneak path currents while permitting legitimate data operation currents to pass, thereby resolving the contradiction between high integration density and data operation reliability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The memory cell is segmented into two distinct functional components: a switching element for data storage and a tunnel element for current control. This segmentation allows each component to specialize in its function, with the tunnel element specifically tasked with preventing sneak path currents while the switching element maintains data storage capability.

Inventive Principle:

Principle #1Segmentation

2Reliability

If transistors or diodes are used to separate switching elements from external circuits, then sneak path currents are prevented, but device complexity and manufacturing difficulty increase

Engineering Contradiction:

Improvesneak path current preventionVSAvoidarray structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The tunnel element, which can be manufactured using simple shadow evaporation processes, replaces complex transistors or diodes. Although the tunnel element has specific functional requirements, its manufacturing process is simpler and more compatible with existing nanogap fabrication techniques, thereby reducing overall device complexity.

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The electrical characteristics of the tunnel element are optimized by controlling its thickness and material composition to achieve the desired current blocking behavior. By adjusting these parameters, the tunnel element can effectively prevent sneak path currents without requiring complex structural designs.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If transistors or diodes are used for separation, then switching elements are protected from external circuits, but miniaturization becomes difficult due to impurity atom sensitivity

Engineering Contradiction:

Improveswitching element protectionVSAvoidelement size

Core Design Contradiction:

ReliabilityVSLength of moving object

Solution Approach 1:

The tunnel element serves as a protective intermediary that is specifically designed to be compatible with nanoscale dimensions. Its function of protecting the switching element from external circuit interference is achieved through its quantum tunneling properties rather than through complex transistor structures, enabling effective protection at minimal size.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The protection mechanism replaces traditional transistor-based electrical control with quantum mechanical tunneling effects. This substitution eliminates the need for complex gate structures and impurity doping, allowing for simpler and more scalable miniaturization of the memory elements.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration simplifies data reading, writing, and deletion while maintaining stable switching operations and improving integration density by preventing sneak path currents and reducing the complexity of the array structure.

Implementation Method 1

tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current

Methodology Applied

Scientific EffectQuantum tunneling:

Implementation Method 2

switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes

Methodology Applied

Scientific EffectResistive switching:

Data Source

PatentUS7679946B2Memory element array having switching elements including a gap of nanometer order

Publication Date: 2010.03.16 FEC IP LLC

AI summary

Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.