Nanoimprint Lithography Distortion Correction via Drop Pattern Segmentation
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Solution Overview
Problem
Existing nanoimprint lithography methods correct for distortion in imprint systems, but this improvement comes at the expense of increasing the mean residual layer thickness (RLT), which can negatively impact subsequent processes.
Innovation Solution
A nanofabrication method that generates multiple drop patterns based on distortion information within the imprint system, allowing for the modification of drop positions to form a fourth drop pattern that balances distortion correction with maintaining target mean RLT by adding or removing drop positions from initial patterns, thereby dispensing formable material effectively without increasing RLT.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a modified drop pattern is used to correct distortion in the imprint system, then overlay accuracy is improved, but the mean residual layer thickness increases
Solution Approach 1:
The patent divides the distortion correction into separate components by generating multiple drop patterns (second and third drop patterns) that address different aspects of distortion, then combines them selectively with the first drop pattern to create a fourth drop pattern. This segmentation allows independent optimization of overlay correction without uniformly increasing material quantity across the entire substrate.
Solution Approach 2:
The patent applies local quality by selectively adding or removing drop positions at specific locations on the substrate based on the distortion characteristics of each region. The fourth drop pattern is customized for each substrate region, adding drops where needed to correct distortion while removing excess drops where the residual layer thickness would be overly increased, thereby achieving local optimization of both overlay accuracy and residual layer thickness control.
2Manufacturing precision
If additional formable material is applied to correct distortion, then overlay is improved, but the imprint process and subsequent processes are negatively impacted
Solution Approach 1:
The patent applies partial action by selectively adding or removing drop positions only where necessary to correct distortion, rather than uniformly applying additional material across the entire substrate. The fourth drop pattern is calculated to provide the minimum necessary material adjustment to achieve distortion correction, avoiding excessive material application that would harm the imprint process and subsequent fabrication steps.
Data Source
AI summary
A nanofabrication method comprises receiving information regarding a distortion within an imprint system, generating a first drop pattern that is not based on the received information, generating a second drop pattern and a third drop pattern, each based on the received information, modifying the first drop pattern to generate a fourth drop pattern. The modifying includes adding a first plurality of drop positions to the first drop pattern or removing a second plurality of drop positions from the first drop pattern, thereby forming an intermediate drop pattern, and either removing the second plurality of drop positions from the intermediate drop pattern or adding the first plurality of drops to the intermediate pattern. The first plurality of drop positions corresponds to drop positions defined by the second drop pattern and the second plurality of drop positions corresponds to drop positions defined by the third drop pattern.