Nanoimprint Mould Etch-Rate Tuning for Uniform Resin Thickness
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Solution Overview
Problem
Existing nano-imprint lithography techniques face challenges in achieving homogeneous residual thickness of resin during pattern transfer due to variations in pattern density, leading to inaccuracies and inefficiencies in etching processes, particularly when using spin-coating methods.
Innovation Solution
A method involving ion implantation in a substrate layer to create portions with different etching properties, allowing patterns of varying densities and heights to be formed in a single etching step, reducing alignment constraints and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If patterns of varying densities are printed using conventional methods, then pattern transfer is achieved, but the residual thickness of resin becomes non-uniform
Solution Approach 1:
The patent applies local quality by creating regions with different etch rates through selective ion implantation. Specifically, regions corresponding to high-density patterns are implanted with ions to reduce their etch rate, while low-density regions maintain higher etch rates. This localized modification of material properties ensures that all regions reach the substrate simultaneously during etching, achieving uniform residual thickness despite varying pattern densities.
Solution Approach 2:
The patent changes the etch rate parameter selectively across different regions of the mold by controlling ion implantation conditions. By varying ion species, implantation energy, and dose in different regions, the etch rate is adjusted to compensate for pattern density variations. This parameter modification approach transforms a uniform etching process into a spatially differentiated process that achieves uniform results.
2Manufacturing precision
If multiple etching steps are used to achieve uniform residual thickness, then etching precision is improved, but manufacturing time and complexity increase
Solution Approach 1:
The patent applies preliminary action by performing ion implantation on the mold regions before the etching process. This pre-treatment modifies the etch rates of different regions in advance, so that during the subsequent single etching step, all regions etch at appropriate rates to reach the substrate simultaneously. This eliminates the need for multiple sequential etching steps with intermediate measurements and adjustments.
3Manufacturing precision
If pattern heights are adjusted according to density variations, then residual thickness homogeneity is achieved, but manufacturing complexity increases
Solution Approach 1:
Instead of creating physical height variations in patterns across different regions, the patent applies local quality by modifying the etch rate property of the mold material through selective ion implantation. This allows all patterns to maintain the same height while achieving different effective etching rates in high-density versus low-density regions, thereby achieving uniform residual thickness without complex height adjustment procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and precision of nano-imprinting by controlling resin thickness homogeneity and reducing manufacturing complexity and costs, while minimizing alignment inaccuracies.
Implementation Method 1
at least one ion implantation in at least one portion of the layer, the ion implantation being configured so as to obtain within the layer at least a first portion which is not implanted or which has a first implantation, and at least a second portion which has a second implantation
Data Source
Figure 1A~1C
Figure 2A~2B
Figure 3A~3C
AI summary
The invention relates to a method for manufacturing a nanoimprint mould (1), and to the associated mould (1), the method comprising provision of a substrate (10) that comprises a layer (11), and at least one ion implantation configured so as to obtain, in the layer (10), at least one first portion (111) that is not implanted or has a first implantation, at least one second portion (111) having a second implantation, and a third non-implanted portion (113) separate from the first portion (111); after the implantation, the method comprises etching of the layer (10), the etching being configured so as to have a different etching rate between at least the second portion (112) and the third portion (113), so as to etch, through openings (130a, 130b) in an etch mask (13), a plurality of patterns (114a, 114b) of different heights in the layer (11).