Sequential Nanoimprint Patterning for Multi-Depth Recess Control
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Solution Overview
Problem
Conventional exposure techniques in semiconductor manufacturing, such as photolithography, face limitations in miniaturization and increased costs, necessitating the development of more efficient patterning technologies like nanoimprint lithography, which requires improvements for better manufacturing yield and dimensional control.
Innovation Solution
An imprint method involving multiple resist layers and molds with different protruding patterns is used to form recess patterns of varying depths through sequential imprinting and etching steps, allowing for precise control of pattern depths and densities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography is used for pattern transfer, then manufacturing process is well-established, but miniaturization capability is limited and costs increase significantly
Solution Approach 1:
The patent uses physical molding to directly copy patterns from a mold to the resist layer, bypassing the optical copying process of photolithography. This mechanical replication enables higher resolution patterning without the cost penalties of advanced optical systems.
Solution Approach 2:
The patent replaces the optical system of photolithography with a mechanical imprinting system. By using physical contact between the mold and resist layer, the process achieves better resolution and lower costs without relying on complex optical equipment.
2Manufacturing precision
If single-step imprinting is used, then process is simple, but formation of recess patterns with different depths is not achievable
Solution Approach 1:
The patent divides the patterning process into multiple sequential imprinting steps, each creating patterns at different depths. The first resist layer forms initial recess patterns, and the second resist layer adds additional patterns, enabling multi-depth recess structures through process segmentation.
Solution Approach 2:
The patent introduces the depth dimension by using multiple resist layers and sequential imprinting. This transforms a single-plane patterning process into a multi-level three-dimensional structure formation process, enabling recess patterns with varying depths.
Data Source
AI summary
An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.