Nanoimprint Lithography Template Oblique Angle Correction

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Solution Overview

Problem

Current nanoimprint lithography techniques face challenges in achieving precise pattern alignment and uniformity on semiconductor wafers due to deviations in the layout of patterned areas, which can lead to biases and require complex correction processes, affecting the efficiency and productivity of semiconductor device fabrication.

Innovation Solution

The method involves fabricating a nanoimprint lithography template using scanning lithography equipment, where the light exposure process is performed with a line passing through the center of the light source incident at an oblique angle, allowing for the correction of layout deviations and enabling the formation of patterned areas on semiconductor wafers with improved uniformity and alignment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional nanoimprint lithography techniques are used with perpendicular light exposure, then the fabrication process is simple, but the pattern alignment precision and layout uniformity deteriorate due to deviations in patterned areas

Engineering Contradiction:
Improvepattern alignment precisionVSAvoidexposure system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by inclining the light exposure line at an oblique angle relative to the template substrate, rather than using perpendicular exposure. This asymmetric exposure geometry corrects layout deviations in patterned areas by compensating for systematic errors through the angular incidence, thereby improving pattern alignment precision without requiring complex correction layouts

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent changes the exposure parameter by adjusting the angle of light incidence from perpendicular to oblique. This parameter modification allows the exposure system to correct layout deviations and improve pattern uniformity while maintaining a relatively simple scanning lithography equipment configuration, resolving the contradiction between precision and complexity

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If separate correction layouts are used to fix pattern deviations, then alignment precision improves, but the fabrication time and productivity deteriorate

Engineering Contradiction:
Improvelayout uniformityVSAvoidfabrication throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent implements preliminary action by incorporating the correction function directly into the template substrate design and exposure process. The template includes predetermined correction regions that automatically compensate for layout deviations during the imaging process, eliminating the need for separate correction layouts and maintaining high fabrication throughput while achieving improved layout uniformity

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent merges the correction function with the primary imaging function by integrating correction regions into the same template substrate. This combination allows both the main pattern imaging and deviation correction to occur simultaneously in a single exposure process, thereby maintaining productivity while achieving improved alignment precision

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If oblique angle light exposure is used, then layout deviations are corrected and pattern uniformity improves, but the exposure system complexity increases

Engineering Contradiction:
Improvepattern uniformityVSAvoidscanning equipment complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies dynamics by implementing adjustable inclination mechanisms for the light exposure line in the scanning lithography equipment. This dynamic adjustment capability allows the system to optimize the oblique angle for different template designs and deviation types, achieving improved pattern uniformity while maintaining operational flexibility and avoiding excessive system complexity through controlled, adaptable adjustments

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the throughput and productivity of semiconductor device fabrication by allowing all chip areas to be imprinted simultaneously on a wafer with reduced bias, thereby improving the uniformity and alignment of patterned areas without the need for separate correction layouts.

Implementation Method 1

exposing regions on the template substrate with light emitted by a light source of the scanning lithography equipment

Methodology Applied
Scientific EffectLight emission and optical exposure: Light

Data Source

PatentUS8912103B2Method of fabricating and correcting nanoimprint lithography templates
Publication Date: 2014.12.16 SAMSUNG ELECTRONICS CO LTD
  • US8912103B2 patent drawing
  • US8912103B2 patent drawing
  • US8912103B2 patent drawing

AI summary

A method of fabricating a nanoimprint lithography template includes installing a reticle on a reticle stage of scanning lithography equipment having a light source, the reticle stage and a template stage, mounting a template substrate on the template stage, and scanning the template substrate with light from the light source in an exposure process in which the light passes through the reticle and impinges the template substrate at an oblique angle of incidence.