Nanoimprint Template for Perpendicular Stepped Resist Structures

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Solution Overview

Problem

In semiconductor device manufacturing, forming multi-layer wiring lines with high precision in a three-dimensional array of memory cells is challenging due to difficulties in creating stable, perpendicular step-up surfaces in stepped structures, which can lead to short-circuiting between conductive films and increase manufacturing costs and complexity.

Innovation Solution

A manufacturing method involving gray scale lithography to form a first resist pattern with a stepped structure, followed by nanoimprint lithography using a template to create a second resist pattern with step-up surfaces perpendicular to flat surfaces, ensuring stable and precise formation of flat surfaces and reducing the risk of short-circuiting.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithography is used to form stepped structures, then manufacturing process is simpler, but manufacturing precision deteriorates due to inability to form perpendicular step-up surfaces

Engineering Contradiction:
Improveprecision of stepped structureVSAvoidcomplexity of manufacturing process
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines gray scale lithography and nanoimprint lithography into a sequential two-step process. The gray scale lithography forms the initial stepped structure, and the nanoimprint lithography subsequently refines the step-up surfaces to be perpendicular. This merging of two lithography techniques resolves the contradiction by achieving high precision stepped structures with perpendicular surfaces while maintaining a manageable process complexity through systematic integration of the two methods.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gray scale lithography is performed as a preliminary action to form the stepped structure with approximate geometry, which then serves as the foundation for the subsequent nanoimprint lithography. This preliminary formation of the stepped structure allows the second lithography step to focus specifically on creating the perpendicular step-up surfaces, thereby achieving high manufacturing precision without requiring the entire process to be overly complex.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If stepped structure is formed with non-perpendicular surfaces, then manufacturing process is easier, but reliability deteriorates due to short-circuiting between conductive films

Engineering Contradiction:
Improveyield of semiconductor deviceVSAvoidease of forming stepped structure
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

By merging gray scale lithography and nanoimprint lithography in sequence, the patent achieves perpendicular step-up surfaces that prevent short-circuiting between conductive films, thereby improving reliability. The gray scale lithography creates the initial stepped structure, and the nanoimprint lithography ensures the step-up surfaces are perpendicular, eliminating the reliability issue while maintaining manufacturing feasibility through the systematic two-step approach.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The nanoimprint lithography process utilizes hydraulic pressure to apply the template to the resist material, enabling precise formation of perpendicular step-up surfaces. This hydraulic mechanism allows for controlled and accurate shaping of the stepped structure, ensuring perpendicular surfaces that prevent short-circuiting while maintaining ease of manufacture through automated pressure-controlled processing.

Inventive Principle:
Principle #29Pneumatics and hydraulics

3Area of moving object

If via-plug pitch is reduced for miniaturization, then device density increases, but manufacturing precision deteriorates due to instability of flat surfaces

Engineering Contradiction:
Improvevia-plug pitchVSAvoidstability of flat surface
Core Design Contradiction:
Area of moving objectVSManufacturing precision

Solution Approach 1:

The patent combines gray scale lithography and nanoimprint lithography to form stepped structures with perpendicular step-up surfaces and stable flat surfaces. This combination allows for reduced via-plug pitch while maintaining manufacturing precision, as the perpendicular surfaces provide stable references for subsequent processing steps, enabling miniaturization without sacrificing flat surface stability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

Instead of forming flat surfaces first and then creating steps, the patent inverts the approach by using nanoimprint lithography to directly form perpendicular step-up surfaces that inherently provide stable flat surfaces. This inverted methodology ensures that even at reduced via-plug pitches, the flat surfaces remain stable due to the perpendicular geometry established by the nanoimprint process.

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method improves the yield and reduces manufacturing costs by maintaining stable flat surfaces and preventing short-circuiting between conductive films, even at smaller via-plug pitches, while allowing for miniaturization of the stair shape processing size.

Implementation Method 1

forming a second resist pattern on the first resist pattern by use of a template for nanoimprint

Methodology Applied
Scientific EffectCapillary action: Capillary Action

Data Source

PatentUS10153176B2Manufacturing method of semiconductor device and template for nanoimprint
Publication Date: 2018.12.11 KIOXIA CORP
  • US10153176B2 patent drawing
  • US10153176B2 patent drawing
  • US10153176B2 patent drawing

AI summary

According to one embodiment, there is provided a manufacturing method of a semiconductor device. The method includes forming a film to be processed on a substrate. The method includes forming a first resist pattern on the film, the first resist pattern having a first stepped structure including a plurality of steps. The method includes forming a second resist pattern on the first resist pattern by use of a template for nanoimprint. The second resist pattern has a second stepped structure, which is arranged corresponding to the first stepped structure and is formed such that a step-up surface extends perpendicularly to a flat surface. The method includes processing the film through the second resist pattern and the first resist pattern.