Nanoimprint Resist Pattern Formation with Selective Curing
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Solution Overview
Problem
Current nanoimprint technologies face challenges in achieving accurate and cost-effective pattern formation on semiconductor wafers, particularly in miniaturization processes below tens of nanometers, due to limitations in photolithography and the need for complex and costly methods to manage resist layer curing and positioning.
Innovation Solution
A pattern formation method involving the formation of a resist layer on a semiconductor wafer with a template, where a chemical liquid inhibits curing in specific regions, allowing for selective curing and removal of the resist layer using light irradiation and organic solvents, without requiring dedicated templates for peripheral areas, thus simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used for miniaturization, then existing technology can be applied, but resolution limit is reached at several tens of nanometers or less
Solution Approach 1:
The patent replaces photolithography (optical system) with nanoimprint technology (mechanical system). By using a template with physical concave-convex structures that directly contact and imprint the resist layer, the method achieves sub-10nm resolution without being constrained by optical diffraction limits, thus substituting an optical process with a mechanical imprinting process.
2Manufacturing precision
If nanoimprint technology is introduced, then next-generation miniaturization is achieved, but process complexity and cost increase
Solution Approach 1:
The patent extracts and removes the resist layer from peripheral regions (first region) where it is not needed for pattern formation. By selectively removing uncured resist from these areas after imprinting, the method eliminates unnecessary material and simplifies subsequent processing steps, reducing overall process complexity while maintaining high-resolution patterning capabilities.
Solution Approach 2:
The patent applies different treatments to different regions of the wafer: the central region (second region) receives full imprinting and curing for pattern formation, while peripheral regions (first region) have their resist selectively removed. This local differentiation optimizes the process by focusing resources on essential areas and simplifying non-essential areas, reducing overall complexity.
3Area of stationary object
If resist layer is formed across entire wafer surface, then complete coverage is achieved, but dust generation increases in peripheral areas
Solution Approach 1:
The patent removes the resist layer from peripheral regions (first region) after the imprinting process. By extracting and eliminating the uncured resist from these non-essential areas, the method prevents the resist from becoming a source of dust contamination during subsequent processing steps, while maintaining complete coverage and proper patterning in the central region where it is needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise and cost-effective pattern formation on semiconductor wafers by suppressing curing in non-essential areas, preventing dust generation and reducing the complexity and cost of nanoimprinting processes, while maintaining accuracy in miniaturization.
Implementation Method 1
irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed
Implementation Method 2
irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region
Implementation Method 3
removing the first resist layer from the first region, the curing of the first resist layer being suppressed
Data Source
AI summary
According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.