Nanoimprint Template Segmentation for Capillary Filling
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Solution Overview
Problem
In semiconductor device manufacturing, the nanoimprint method faces challenges with the filling of imprint materials in large patterns due to decreased capillary force, leading to increased manufacturing time and partial pattern loss, especially in peripheral circuit and dicing regions where resist remains.
Innovation Solution
A method involving a template with specific recess patterns, including a first recess pattern and a larger second recess pattern with grooves, is used to enhance capillary force, allowing for efficient filling of imprint materials and reducing pattern loss by combining nanoimprint and photolithography techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a template with a large recess pattern is used for patterning peripheral circuits and dicing regions, then the pattern coverage is improved, but the capillary force decreases causing insufficient filling of imprint material
Solution Approach 1:
The template is divided into multiple recess patterns with different sizes and depths. Specifically, the template includes a first recess pattern for fine patterning and a second recess pattern with larger area for peripheral circuits and dicing regions. This segmentation allows each recess pattern to be optimized independently, maintaining sufficient capillary force even in large-area regions by adjusting the depth and structural characteristics of each segment.
Solution Approach 2:
Different regions of the template are given different structural qualities. The first recess pattern has specific depth and dimensional characteristics optimized for fine patterning, while the second recess pattern has larger area characteristics optimized for peripheral circuits and dicing regions. This local differentiation ensures that each region has the appropriate capillary force and filling characteristics for its specific function.
2Reliability
If the imprint material filling time is increased to ensure sufficient filling in large patterns, then the filling completeness is improved, but the manufacturing time increases
Solution Approach 1:
The template structure parameters are changed to optimize filling speed. By adjusting the depth, width, and shape of the recess patterns, the capillary force is enhanced, which accelerates the filling process. The second recess pattern specifically has structural parameters that promote rapid filling while maintaining complete coverage, reducing the required filling time without sacrificing filling completeness.
3Manufacturing precision
If the template recess depth is increased to improve pattern transfer quality, then the pattern definition is improved, but the filling speed decreases due to reduced capillary force
Solution Approach 1:
The template is segmented into recess patterns with different depth characteristics. The first recess pattern has greater depth for high-definition fine patterning, while the second recess pattern has optimized depth for rapid filling in large-area regions. This segmentation allows the system to achieve both high pattern definition and fast filling speed by matching the appropriate recess pattern to the specific application region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective filling of imprint materials in large patterns, reducing manufacturing time and minimizing pattern loss by increasing capillary force and improving the alignment and coverage of resist patterns, thereby enhancing the overall semiconductor device patterning process.
Implementation Method 1
there is a large pattern where a resist of several hundred micrometers or more remains over the peripheral circuit portion and the dicing region. In a large pattern where a resist thus remains over a wide region, the capillary force decreases and thus the filling speed of an imprint material decreases.
Implementation Method 2
a photo-nanoimprint method using a photocuring resist which is an imprint material... (3) Cure the resist by light irradiation
Data Source
AI summary
A template having a first recess pattern is brought into contact with a mask material formed on a substrate. The mask material with which the first recess pattern is filled is cured. A mask material pattern is formed on the substrate by releasing the template from the mask material. A resist pattern is formed to cover a part of the mask material pattern by forming a resist on the mask material pattern and selectively irradiating radiation onto the resist and thereafter developing the resist. The substrate is processed by using the mask material pattern and the resist pattern as a mask.