Nanoisland Capacitor Plates for Higher Package Passive Density
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Solution Overview
Problem
Legacy methods for increasing passive component density in semiconductor packages are limited by high costs and inefficiencies, particularly in capacitors, which restrict power delivery and functionality due to their discrete and surface-layer implementation.
Innovation Solution
The integration of nanoislands on capacitive plates within a package assembly, utilizing sputtering or evaporation techniques to create supercapacitive structures that enhance power delivery and performance while reducing manufacturing costs by forming super-capacitive junctions through small gaps between dielectric nanoislands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If discrete surface-layer capacitor implementation is used, then manufacturing simplicity is maintained, but passive component density and power delivery are limited
Solution Approach 1:
The patent transitions from traditional surface-layer capacitor implementation to a vertical three-dimensional structure by drilling holes through the package substrate and forming capacitors within the bulk material. This dimensional change enables significantly higher passive component density by utilizing the volume of the package rather than only the surface area.
Solution Approach 2:
The capacitor structure is nested within the package substrate by drilling holes through the substrate and forming conductive plates and dielectric layers inside these holes. This nesting approach allows capacitors to be embedded within the package core, increasing density without expanding the package footprint.
2Power
If traditional capacitor implementation is used, then manufacturing process simplicity is maintained, but power delivery and functionality are restricted
Solution Approach 1:
The patent changes the physical parameters of the capacitor by creating nanoisland structures with specific size ranges (1-100 nm) and controlling the thickness of dielectric layers (5-50 nm). These parameter changes enable supercapacitive behavior with higher power delivery capability while using standard sputtering or evaporation techniques that are compatible with existing manufacturing processes.
Solution Approach 2:
The patent applies local quality by creating regions of nanoislands with specific properties on the conductive plates. The nanoislands are formed with controlled density, size, and distribution patterns in specific locations, allowing optimization of power delivery and capacitance in different regions of the capacitor structure.
3Quantity of substance
If surface-layer capacitor implementation is used, then manufacturing cost efficiency is maintained, but passive density increases are restricted
Solution Approach 1:
The patent replaces mechanical drilling and assembly methods with vapor deposition techniques (sputtering or evaporation) to form the capacitor structures. This substitution enables precise control of nanoisland formation, dielectric layer thickness, and material composition at the nanometer scale, achieving high manufacturing precision while maintaining cost efficiency through existing semiconductor manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases passive density, reduces electrical loss, and enhances package functionality by creating high-permittivity supercapacitive structures within the package core, addressing the limitations of legacy implementations.
Implementation Method 1
utilizing sputtering or evaporation techniques to create supercapacitive structures
Implementation Method 2
utilizing sputtering or evaporation techniques to create supercapacitive structures
Implementation Method 3
the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor
Implementation Method 4
creating high-permittivity supercapacitive structures within the package core
Data Source
AI summary
Embodiments herein relate to a capacitor device or a manufacturing process flow for creating a capacitor that includes nanoislands within a package. The capacitor a first conductive plate having a first side and a second side opposite the first side and a second conductive plate having a first side and a second side opposite the first side where the first side of the first conductive plate faces the first side of the second conductive plate. A first plurality of nanoislands is distributed on the first side of the first conductive plate and a second plurality of nanoislands is distributed on the first side of the second conductive plate, where the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor. The nanoislands may be applied to the conductive plates using a sputtering technique.