Nanolithography System Super-Resolution Apertures Mask Elimination

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Solution Overview

Problem

Conventional lithography systems face limitations in achieving super-resolution patterns due to diffraction and the need for expensive, complex masks, especially for low-volume and prototype IC production, which requires a rapid and inexpensive fabrication technique compatible with existing optical infrastructure.

Innovation Solution

A nanolithography system utilizing a novel optical printing head with super-resolution apertures, such as the C-aperture, that creates small but bright near-field transmission patterns, allowing for high-throughput nanolithography while being compatible with conventional optical lithography infrastructure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithography systems are used to achieve super-resolution patterns, then manufacturing precision is improved, but device complexity and cost increase due to expensive complex masks

Engineering Contradiction:
Improvepattern resolutionVSAvoidmask complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes the complex mask component from the lithography system by implementing direct-write nanolithography. Instead of using physical masks to define patterns, the system directly writes patterns onto the substrate using focused electron beams or other direct-write techniques, eliminating mask fabrication, handling, and alignment complexities while achieving super-resolution patterns.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses digital pattern data to directly create physical patterns on the substrate without physical masks. The design data is converted into writing instructions that guide the direct-write system to reproduce the desired patterns directly on the target substrate, replacing the mask-as-copy intermediary with a digital-to-physical direct conversion process.

Inventive Principle:
Principle #26Copying

2Manufacturing precision

If conventional lithography systems are used for low-volume and prototype IC production, then manufacturing precision is improved, but productivity deteriorates due to expensive and time-consuming mask fabrication

Engineering Contradiction:
Improvepattern resolutionVSAvoidwafer processing rate
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary digital pattern preparation and simulation before the actual writing process. Design data is pre-processed, optimized, and validated in silico before direct writing begins, eliminating the need for physical mask fabrication and pre-checks. This preliminary digital action accelerates the overall process by removing sequential mask-making steps while maintaining pattern accuracy.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces expensive, durable physical masks with inexpensive, disposable digital pattern data. Digital designs can be rapidly modified, stored, and transferred without physical degradation, allowing rapid iteration for prototype and low-volume production. Each writing job uses fresh digital data that can be instantly updated without the cost and time of mask remanufacturing.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Manufacturing precision

If shorter wavelength light is used to achieve smaller features, then manufacturing precision is improved, but use of energy increases and the system becomes more complex

Engineering Contradiction:
Improvefeature sizeVSAvoidenergy consumption
Core Design Contradiction:
Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent replaces the optical mechanical lithography system with an electron beam or direct-write system. Instead of using photons with shorter wavelengths that require high energy and complex optical components, the system uses focused electron beams or other direct-write mechanisms that achieve comparable or superior resolution with different energy characteristics, eliminating the need for extreme UV sources and complex optical path management.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

4Manufacturing precision

If super-resolution apertures are used to create near-field transmission patterns, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improvepattern resolutionVSAvoidaperture system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes the super-resolution aperture component from the optical system by implementing direct-write nanolithography. Instead of using complex near-field apertures to achieve super-resolution, the system directly writes patterns using focused beams or other direct-write techniques, eliminating aperture fabrication, positioning, and alignment complexities while achieving equivalent or superior resolution.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the writing of extremely small, super-resolution patterns with high throughput and reduced costs, overcoming the limitations of conventional systems by using an array of super-resolution apertures that can expose multiple spots simultaneously, significantly increasing wafer processing rates.

Implementation Method 1

Optical systems capable of producing smaller features, usually through near-field or evanescent phenomena, are considered 'super-resolution' patterning systems

Methodology Applied
Scientific EffectDiffraction: Diffraction

Data Source

PatentUS20240248407A1Method and system for nanoscale data recording
Publication Date: 2024.07.25 SCHELLENBERG FRLIN MARK
  • US20240248407A1 patent drawing
  • US20240248407A1 patent drawing
  • US20240248407A1 patent drawing

AI summary

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.