Semiconductor Nanoparticle Agglomerate for Degradation Resistance
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Solution Overview
Problem
Semiconductor nanoparticles in existing networks are susceptible to degradation due to external influences like oxygen and water, leading to oxidation and reduced stability.
Innovation Solution
A semiconductor structure comprising discrete encapsulated nanoparticles with an encapsulation material, forming an agglomerate with discrete semiconductor free nanoparticles, providing additional protection through point-to-point connections and a concentration gradient that shields encapsulated nanoparticles from degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor nanoparticles are used in networks with fused insulator coatings, then wavelength conversion capability is achieved, but the nanoparticles are susceptible to degradation from external influences like oxygen and water
Solution Approach 1:
The patent applies nested protection by placing semiconductor nanoparticles inside semiconductor-free nanoparticles, which are in turn enclosed within an insulator coating network. This multi-layer nesting structure creates progressive barriers that shield the core semiconductor nanoparticles from harmful external factors like oxygen and water, significantly improving their stability and reliability.
Solution Approach 2:
The patent introduces semiconductor-free nanoparticles as intermediary protective layers between the semiconductor nanoparticles and the external environment. These intermediary nanoparticles act as buffers that prevent direct contact between the harmful external factors and the sensitive semiconductor material, thereby reducing degradation.
2Productivity
If semiconductor nanoparticles are thinly coated in existing networks, then wavelength conversion is enabled, but the particles remain exposed and vulnerable to oxidation
Solution Approach 1:
The patent implements a nested structure where semiconductor nanoparticles are placed inside semiconductor-free nanoparticles, which are then embedded in an insulator coating network. This nested arrangement provides thick, multi-layer protection without compromising the wavelength conversion efficiency of the core semiconductor particles, as the protective layers are transparent to the relevant electromagnetic radiation.
Solution Approach 2:
The patent creates a composite structure combining semiconductor nanoparticles, semiconductor-free nanoparticles, and insulator coating materials. This composite material system integrates the functional properties of semiconductor wavelength conversion with the protective properties of the insulator coating, achieving both high productivity and reliability.
3Ease of manufacture
If semiconductor nanoparticles are placed on the outside and periphery of networks, then network formation is achieved, but the particles are left susceptible to degradation
Solution Approach 1:
The patent inverts the conventional approach by placing semiconductor-free nanoparticles (without the harmful semiconductor material) on the outside and periphery of the network structure, while enclosing the valuable semiconductor nanoparticles inside. This inversion maintains the network formation capability and peripheral particle distribution for ease of manufacture, but protects the sensitive semiconductor particles from external environmental factors.
Solution Approach 2:
The patent uses semiconductor-free nanoparticles as intermediary protective elements positioned at the network periphery. These intermediary particles provide a protective barrier between the external environment and the internal semiconductor nanoparticles, reducing exposure to harmful factors while maintaining network integrity and manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure exhibits improved mechanical stability and enhanced protection against degradation, maintaining performance in harsh conditions such as high humidity and power usage.
Implementation Method 1
The encapsulation is provided, in particular, to protect the semiconductor nanoparticles from external influences like oxygen or water as these external influences can lead to an oxidation and therefore to a degradation of the semiconductor nanoparticles
Implementation Method 2
the semiconductor nanoparticles may be used as a conversion material for converting the wavelength of electromagnetic radiation which passes through at least part of the conversion material
Implementation Method 3
wavelength converting materials absorb electromagnetic radiation of the incident radiation, convert the absorbed radiation at least partially in electromagnetic radiation of the second wavelength range
Data Source
AI summary
A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.