Nanoparticle Bonding Layers for IC Die Heat Dissipation

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Solution Overview

Problem

As semiconductor devices undergo miniaturization, effective heat dissipation becomes a challenge due to increased integration density, leading to performance and reliability issues.

Innovation Solution

The use of bonding layers with high thermal conductivity materials, such as metal oxides and nanoparticles like silver, ruthenium, or niobium, to directly bond an integrated circuit die to a support substrate, enhancing heat dissipation through dielectric-to-dielectric bonding processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but heat dissipation becomes ineffective leading to performance and reliability issues

Engineering Contradiction:
Improveintegration densityVSAvoidheat dissipation effectiveness
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the thermal conductivity parameter of the bonding layer by incorporating high thermal conductivity materials (such as diamond, cubic boron nitride, or metal particles) into the bonding layer composition. This parameter change enables effective heat dissipation while maintaining the high integration density achieved through miniaturization

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The bonding layer is formulated as a composite material combining dielectric materials with high thermal conductivity additives (diamond particles, cubic boron nitride, metal particles). This composite structure provides both the electrical insulation required for bonding and the thermal conduction necessary for heat dissipation

Inventive Principle:
Principle #40Composite materials

2Reliability

If bonding layers with high thermal conductivity materials are used to enhance heat dissipation, then heat transfer improves, but manufacturing complexity increases

Engineering Contradiction:
Improveheat dissipationVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The bonding layer is designed to perform multiple functions simultaneously: electrical insulation, mechanical bonding, and thermal conduction. By incorporating high thermal conductivity materials into the bonding layer itself, the patent eliminates the need for separate thermal management structures, thereby reducing overall device complexity while improving heat dissipation

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively transfers heat generated by the integrated circuit die to the substrate, improving performance and reliability by maintaining mechanical properties while achieving high thermal conductivity.

Implementation Method 1

Each of the two bonding layers may comprise a base layer and nanoparticles embedded in the base layer. The base layers may comprise materials with high thermal conductivities, such as a metal oxide layer. The nanoparticles may comprise materials with even higher thermal conductivities than the base layers... the two bonding layers may have high thermal conductivities, which lead to effective heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250006687A1Heat dissipation in semiconductor devices
Publication Date: 2025.01.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250006687A1 patent drawing
  • US20250006687A1 patent drawing
  • US20250006687A1 patent drawing

AI summary

An integrated circuit die with two material layers having metal nano-particles and the method of forming the same are provided. The integrated circuit die includes a device layer comprising a first transistor, a first interconnect structure on a first side of the device layer, a first material layer on the first interconnect structure, wherein the first material layer comprises first metal nano-particles, and a second material layer bonded to the first material layer, wherein the second material layer comprises second metal nano-particles, and wherein the first material layer and the second material layer share an interface.