Nanoparticle Charge-Storage Layer for Reliable Flash Memory

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Solution Overview

Problem

Existing semiconductor memory devices face challenges in improving operational reliability and manufacturing efficiency, particularly in nonvolatile memory devices like flash memory, where the data storage layer materials and processes need enhancement.

Innovation Solution

The semiconductor memory device incorporates a data storage layer with nano-particles spaced apart by a porous structure, chemical chain, or gap, and includes a channel layer, gate electrode, blocking insulating layer, and tunnel insulating layer, with the nano-particles being formed using a Metal Organic Framework (MOF) or Self-Assembled Monolayer (SAM) to control the distance between particles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a floating gate made of poly-silicon is used as the data storage layer, then electrical characteristics of a cell are improved, but the manufacturing process becomes more complex

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidmanufacturing process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter of the data storage layer from poly-silicon floating gate to charge trap layer made of nitride material, and further to nano-particle structures. This material parameter change simplifies the manufacturing process while maintaining charge storage functionality, resolving the contradiction between electrical characteristics and ease of manufacture.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures including charge trap layers made of nitride materials combined with oxide layers, and later nano-particle structures embedded in insulating matrices. These composite structures achieve both good electrical characteristics for charge storage and simplified manufacturing compared to poly-silicon floating gates.

Inventive Principle:

Principle #40Composite materials

2Ease of manufacture

If a charge trap layer made of a nitride layer is used as the data storage layer, then the manufacturing process is simplified, but charge storage control may be insufficient

Engineering Contradiction:

Improvemanufacturing processVSAvoidcharge storage control

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces porous structures in the form of nano-particles with controlled spacing and sizes. These porous/nano-structured materials provide increased surface area and improved charge storage control while maintaining the simplified nitride-based manufacturing process. The porous structure allows better charge confinement and control compared to dense nitride layers.

Inventive Principle:

Principle #31Porous materials

Solution Approach 2:

The patent transitions from two-dimensional charge trap layers to three-dimensional nano-particle structures with controlled spacing. This dimensional change provides additional degrees of freedom for charge storage control through particle size, spacing, and distribution, while maintaining the manufacturing simplicity of nitride-based processes.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Reliability

If nano-particles are used in the data storage layer, then operational reliability is enhanced, but manufacturing precision requirements increase

Engineering Contradiction:

Improveoperational reliabilityVSAvoidparticle spacing control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent introduces intermediary materials such as insulating layers and spacer materials between nano-particles to control their spacing and distribution. These intermediary structures mediate the positioning of nano-particles, reducing the direct manufacturing precision requirements while maintaining the operational reliability benefits of nano-particle structures.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent controls key parameters such as nano-particle size, spacing, and concentration to optimize the balance between operational reliability and manufacturing precision. By adjusting these parameters within certain ranges, the patent achieves reliable charge storage without requiring extremely precise manufacturing control.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances operational reliability and simplifies the manufacturing process, allowing for improved charge storage and control in the memory cells.

Implementation Method 1

The data storage layer includes nano-particles spaced apart from each other by a porous structure, a chemical chain or a gap

Methodology Applied

Scientific EffectPorous structure: Porosity

Implementation Method 2

a tunnel insulating layer between the channel layer and the blocking insulating layer

Methodology Applied

Scientific EffectQuantum tunneling:

Data Source

PatentUS20250386553A1Semiconductor memory device and manufacturing method of semiconductor memory device

Publication Date: 2025.12.18 SK HYNIX INC

AI summary

A semiconductor memory device includes a channel layer, a gate electrode spaced apart from the channel layer, a blocking insulating layer between the gate electrode and the channel layer, a tunnel insulating layer between the channel layer and the blocking insulating layer, and nano-particles spaced apart from each other between the tunnel insulating layer and the blocking insulating layer.